Lattice mismatched five-junction solar cell and preparation method thereof
A solar cell and lattice mismatch technology, applied in the field of solar photovoltaic power generation, can solve the problems of limiting the performance of the cell, the actual progress is less than expected, the spectral division is far from the best state, etc. The effect of improving battery conversion efficiency
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[0039] The present invention will be further described below in conjunction with specific examples.
[0040] Such as figure 1 As shown, the lattice-mismatched five-junction solar cell provided by this embodiment includes a Ge substrate 1, and the Ge substrate 1 is a p-type Ge single wafer, and the Ge substrate 1 is layered on top of the Ge substrate 1. The stacked structure is sequentially provided with a GaInP nucleation layer 2, a GaInAs buffer layer 3, an AlGaInAs DBR reflective layer 4, an AlGaInAs lattice gradient buffer layer 6, a first GaInAs sub-cell 7, a second GaInAs sub-cell 9, a first GaInP The sub-cell 11, the second GaInP sub-cell 13 and the GaInAs cap layer 14, the AlGaInAs DBR reflective layer 4 and the AlGaInAs lattice gradient buffer layer 6 are connected through the first tunnel junction 5, the first GaInAs sub-cell 7 and The second GaInAs sub-cell 9 is connected through the second tunnel junction 8, the second GaInAs sub-cell 9 and the first GaInP sub-cell 11
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