Subtractive methods for creating dielectric isolation structures within open features

a dielectric isolation structure and subtraction technology, applied in the field of partial filling of open features, can solve the problems of increasing the difficulty of ability, imposing ever-increasing challenges on the ability, and difficult to partially fill open features such as the trenches described above, and achieve the effect of such as oxide material, and reducing the difficulty of dielectric material

Active Publication Date: 2016-10-13
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent is about a method for partially filling an open feature on a substrate, specifically, creating a dielectric plug at the bottom of the open feature. The method involves using an organic coating to overfill the open feature and then removing a portion of the coating to expose the layer underneath. This exposed layer is then recessed to a specific depth to create an organic coating plug of a known thickness at the bottom of the open feature. This plug is then converted into an inorganic plug by changing its chemical composition. The technical effect of this patent is the creation of a reliable and consistent method for forming a secure and reliable dielectric plug at the bottom of an open feature on a substrate.

Problems solved by technology

These trends and requirements impose ever-increasing challenges on the ability to prepare electrical structure isolation during circuit pattern fabrication.
However, as the size of integrated circuits became smaller, the planar engagement of the metal gate with the silicon region led to unsatisfactory performance of the chip.
In response to this unsatisfactory performance, three-dimensional transistors were developed, in which the dielectric material did not extend to the top of the trench, thereby exposing three surfaces of the silicon fin.
Nonetheless, partially filling an open feature, such as the trenches described above, with a typical dielectric material, such as an oxide material, is difficult.

Method used

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Embodiment Construction

[0018]In the following description, for purposes of explanation and not limitation, specific details are set forth, such as a particular process flow for a processing system or collection of systems. However, it should be understood that the invention may be practiced in other embodiments that depart from these specific details.

[0019]Similarly, for purposes of explanation, specific numbers, materials, and configurations are set forth in order to provide a thorough understanding of the invention. Nevertheless, the invention may be practiced without these specific details. Furthermore, it is understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

[0020]Various operations will be described as multiple discrete operations in turn, in a manner that is most helpful in understanding the invention. However, the order of description should not be construed as to imply that these operations are necessarily order depe...

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Abstract

A method for partially filling an open feature on a substrate includes receiving a substrate having a layer with at least one open feature formed therein, wherein the open feature penetrates into the layer from an upper surface and includes sidewalls extending to a bottom of the open feature. The open feature is overfilled with an organic coating that covers the upper surface of the layer and extends to the bottom of the open feature. The method further includes removing a portion of the organic coating to expose the upper surface of the layer and recessing the organic coating to a pre-determined depth from the upper surface to create an organic coating plug of pre-determined thickness at the bottom of the open feature, and converting the chemical composition of the organic coating plug to create an inorganic plug.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is related and claims priority to U.S. Provisional Patent Application Ser. No. 62 / 146,386 filed on Apr. 12, 2015, the entire contents of which are herein incorporated by reference.FIELD OF INVENTION[0002]The invention relates to methods for partially filling an open feature on a substrate, and in particular, to methods for forming a dielectric plug at the bottom of the open feature in a semiconductor device.DESCRIPTION OF RELATED ART[0003]The need to remain competitive in cost and performance in the production of semiconductor devices elevates demand to continually increase the device density of integrated circuits. And, to achieve higher degrees of integration with the miniaturization in semiconductor integrated circuitry, robust methodologies are required to reduce the scale of the circuit pattern formed on the semiconductor substrate. These trends and requirements impose ever-increasing challenges on the ability to pre...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/762H01L21/311H01L21/3105H01L21/02
CPCH01L21/76224H01L21/02118H01L21/02359H01L21/02323H01L21/02343H01L21/02178H01L21/31133H01L21/02348H01L21/31051H01L21/02318H01L21/02164H01L21/02186H01L21/02238H01L21/02244H01L21/0273H01L21/31058H01L21/31122H01L21/56H01L21/76805H01L21/76808H01L21/76831H01L21/76897
Inventor SOMERVELL, MARK H.RATHSACK, BENJAMEN M.
Owner TOKYO ELECTRON LTD
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