Method for fabricating semiconductor device with protruding contact

Active Publication Date: 2022-04-21
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0025]Due to the design of the semiconductor device of the present disclosure, the contact surface between the landing pad layer and the capacitor contact structure may be increased. Accordingly, the resistance between the landing pad layer and

Problems solved by technology

However, a variety of issues arise during the scaling-down process, and such issues are continuously increasing.
The

Method used

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Examples

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Example

[0051]The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.

[0052]

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PUM

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Abstract

The present application discloses a method for fabricating a semiconductor device with a protruding contact. The method includes providing a substrate; forming a bit line structure on the substrate; forming a capacitor contact structure next to the bit line structure; recessing a top surface of the bit line structure; and forming a landing pad layer covering a portion of a top surface of the capacitor contact structure and an upper portion of a sidewall of the capacitor contact structure.

Description

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Claims

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Application Information

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Owner NAN YA TECH
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