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Power semiconductor device and manufacturing method thereof,Transparent anti-static polyvinylidene fluoride piezoelectric material and preparation method thereof

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Piezoelectricity is the electric charge that accumulates in certain solid materials (such as crystals, certain ceramics, and biological matter such as bone, DNA and various proteins) in response to applied mechanical stress. The word piezoelectricity means electricity resulting from pressure and latent heat. It is derived from the Greek word πιέζειν; piezein, which means to squeeze or press, and ἤλεκτρον ēlektron, which means amber, an ancient source of electric charge. French physicists Jacques and Pierre Curie discovered piezoelectricity in 1880.

Power semiconductor device and manufacturing method thereof

ActiveCN104377241AImprove electric field distributionImprove breakdown voltageSemiconductor/solid-state device manufacturingSemiconductor devicesPower semiconductor deviceEngineering

The invention discloses a power semiconductor device and a manufacturing method thereof. The power semiconductor device comprises a substrate, a core forming layer, a buffer layer, a channel layer, a barrier layer, a source electrode, a drain electrode, a grid electrode and a junction termination structure located on the barrier layer. The junction termination structure extends in the direction from the edge, close to one side of the drain electrode, of the grid electrode to the drain electrode. Due to the piezoelectric effect caused by lattice constant difference between the junction termination structure and the barrier layer under the junction termination structure, two-dimensional electronic gas at the position of the interface of the barrier layer and the channel layer is partially exhausted. The junction termination structure can effectively improve the electric field distribution of the barrier layer so as to improve the breakdown voltage of the device.

Power semiconductor device and manufacturing method thereof

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Owner:GPOWER SEMICON

Transparent anti-static polyvinylidene fluoride piezoelectric material and preparation method thereof

InactiveCN103102623AImprove antistatic performanceExcellent piezoelectric propertiesCarbon nanotubePolyvinylidene difluoride

The invention relates to a transparent anti-static polyvinylidene fluoride piezoelectric material and a preparation method thereof. The filler is very difficult to uniformly disperse by adding carbon nano-tubes, graphene or zinc oxide to PVDF (Polyvinylidene Fluoride) material in the prior art; and the material is directly transmitted to be conductive from insulating, and is not attractive. The polyvinylidene fluoride piezoelectric material is a mixture of polyvinylidene fluoride and ionic liquid. The preparation method of the transparent anti-static polyvinylidene fluoride piezoelectric material comprises the following steps of: drying the polyvinylidene fluoride and the ionic liquid for 24 hours to 48 hours at 80 DEG C to 110 DEG C in a vacuum environment; adding the dried polyvinylidene fluoride and ionic liquid in a mass ratio of 100:(0.5-40) to a fusion smelting device for melting-blending at 180 DEG C to 200 DEG C to obtain a mixture; and discharging the mixture from the melting-blending device, cooling the mixture to normal temperature and crystallizing the cooled mixture to obtain the polyvinylidene fluoride piezoelectric material. The polyvinylidene fluoride piezoelectric material disclosed by the invention has good antistatic property, good piezoelectricity and excellent transparency. According to the preparation method of the polyvinylidene fluoride piezoelectric material disclosed by the invention, the normal melting-blending device is only needed to be used, and the industrial preparation is simple.

Owner:HANGZHOU NORMAL UNIVERSITY

2 results about "Piezoelectricity" patented technology

Power semiconductor device and manufacturing method thereof

Transparent anti-static polyvinylidene fluoride piezoelectric material and preparation method thereof

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