Bolt lock device having sensing amplifier

A technology of sense amplifiers and latches, applied in the field of latches, which can solve the problems of short data_window period, power consumption, and prone to surges, etc.

Active Publication Date: 2008-02-06
ETRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the output signal DT / DTB is toggled repeatedly, more power is consumed, and glitches are more likely to occur, which in turn is more likely to cause malfunctions
On the other hand, because the cycle of the period data_window is too short, the complexity of the control circuit that can correctly capture the data in the output signal DT / DTB will be relatively high

Method used

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  • Bolt lock device having sensing amplifier
  • Bolt lock device having sensing amplifier
  • Bolt lock device having sensing amplifier

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Embodiment Construction

[0020] FIG. 3 is a schematic diagram of an architecture according to an embodiment of the present invention. FIG. 4 is a signal timing diagram of the present invention.

[0021] Referring to FIG. 3 , the present invention has a latch 300 with a sense amplifier, which is applicable to a general DRAM circuit, and includes an input circuit 340, a sense amplifier 310, a latch circuit 320 and an output circuit 330 . The input circuit 340 includes a plurality of identical input units 341-34N (N≥1, N is a positive integer), wherein the number of input units depends on the needs of the application, and each input unit receives a data line signal (MDQ1- MDQN) and a complementary data line signal (MDQ1B~MDQNB), and is controlled by a data isolation signal (SAISO1~SAISON), and, at the same time, among these input units 341~34N, there is only one data input unit The isolation signal is activated (SAISO in FIG. 4 is a low voltage potential), so that the data line signal and the complemen...

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Abstract

The present invention relates to a crosspiece lock with a sensing amplifier, the crosspiece includes an input circuit, a sensing amplifier, a crosspiece locking circuit and an output circuit; wherein, the crosspiece locking circuit adopted by the present invention reduces the frequency variation of an output signal and a complementary output signal, thereby saving a lot of power. The present invention does not produce surge waves and error actions; and is more suitably applied to a high-speed circuit.

Description

technical field [0001] The present invention relates to a latch, in particular to a sense amplifier-based latch, which is applied to a DRAM circuit. Background technique [0002] FIG. 1 is a schematic diagram of a simplified data path from a memory cell 110 to a data line sense amplifier according to a conventional dynamic random access memory (DRAM) circuit architecture. Referring to FIG. 1, after the transistor 112 is turned on (turnon) through the word line WL, the bit data placed in the capacitor C passes through the long bit line from the memory cell (memory cell) 110. BL, bit switch (bit switch) 122 controlled by control signal BSEN, local data line (local data line) LDQ, main data switch (main data switch) (or transmission gate) 124 controlled by control signal SWEN, main When the data line (master data line, MDQ) is finally transmitted to the I / O data bus, the signal is already very weak. Therefore, in the existing DRAM architecture, there are two sense amplifiers ...

Claims

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Application Information

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IPC IPC(8): G11C7/06
Inventor 袁德铭王释兴
Owner ETRON TECH INC
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