Composition for stable storage at room temperature and preparation method of quantum dot light emitting diode device

A composition and stable technology, applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor QLED device effect and increase of enterprise production cost, etc.

Inactive Publication Date: 2018-12-11
JIAXING NADING PHOTOELECTRIC TECH CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, nanoparticles without ligands will mature when placed at room temperature, resulting in changes in the size of the nanoparticles, which will deteriorate the effect of the QLED device. Usually, the storage of nanoparticles in the electron transport layer is at low temperature, but low temperature storage will increase the cost of the enterprise. Cost of production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] (1) ITO cleaning: put the ITO glass piece into a beaker filled with acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes in sequence. Place the washed ITO in a vacuum oven and dry for later use.

[0055] (2) An electron transport layer ZnO was spin-coated on the ITO conductive glass.

[0056] (3) A hole blocking layer is spin-coated on the electron transport layer.

[0057] (4) Spin-coat a layer of quantum dot luminescent layer on the hole blocking layer.

[0058] (5) Spin-coat a layer of hole transport layer on the quantum dot light-emitting layer.

[0059] (6) A hole injection layer is spin-coated on the hole transport layer.

[0060] (7) On the hole injection layer, a layer of cathode metal Al electrode is evaporated.

[0061] In the above step (2), a ligand and a flocculant are added to the electron transport layer, the ligand is sodium polyacrylate, the flocculant is sodium chloride, and the concentratio...

Embodiment 2

[0064] (1) ITO cleaning: put the ITO glass piece into a beaker filled with acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes in sequence. Place the washed ITO in a vacuum oven and dry for later use.

[0065] (2) An electron transport layer ZnO was spin-coated on the ITO conductive glass.

[0066] (3) A hole blocking layer is spin-coated on the electron transport layer.

[0067] (4) Spin-coat a layer of quantum dot luminescent layer on the hole blocking layer.

[0068] (5) Spin-coat a layer of hole transport layer on the quantum dot light-emitting layer.

[0069] (6) A hole injection layer is spin-coated on the hole transport layer.

[0070] (7) On the hole injection layer, a layer of cathode metal Al electrode is evaporated.

[0071] In the above step (2), a ligand and a flocculant are added to the electron transport layer, the ligand is sodium polyacrylate, the flocculant is sodium chloride, and the concentratio...

Embodiment 3

[0073] (1) ITO cleaning: put the ITO glass piece into a beaker filled with acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes in sequence. Place the washed ITO in a vacuum oven and dry for later use.

[0074] (2) Spin-coat an electron transport layer TiO on the ITO conductive glass 2 .

[0075] (3) A hole blocking layer is spin-coated on the electron transport layer.

[0076] (4) Spin-coat a layer of quantum dot luminescent layer on the hole blocking layer.

[0077] (5) Spin-coat a layer of hole transport layer on the quantum dot light-emitting layer.

[0078] (6) A hole injection layer is spin-coated on the hole transport layer.

[0079] (7) On the hole injection layer, a layer of cathode metal Al electrode is evaporated.

[0080] In the above step (2), a ligand and a flocculant are added to the electron transport layer, the ligand is sodium polyacrylate, the flocculant is sodium chloride, and the concentration ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a composition for stable storage at roomtemperature, comprising a stable dispersion liquid and a flocculant, wherein the stable dispersion liquid comprises electron transporting layer nanoparticles, a ligand and a solvent, and the flocculant is in mixe usewith the stable dispersion liquid. The invention also discloses a manufacturing method of a quantum dot light emitting diode device. The flocculant is added to the stable dispersion, and then an electron transport layer is formed on the first electrode using the formed mixture, and then the electron transport layer isannealed. Compared with the prior art, the compositions of the present invention can be stably stored at room temperature. In the fabrication process of quantum dot light emitting diode device, with the increase of annealing time, the ligands on the surface of electron transport layer nanoparticles fall off, thus ensuring the fabrication effect of quantum dot light emitting diode device and reducing the storage cost in the production process.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescence devices, in particular to a composition capable of stable storage at room temperature and a method for manufacturing a quantum dot light-emitting diode device. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) based on semiconductor quantum dots (QDs) have the advantages of high luminous efficiency, high color purity, and simple and adjustable luminous color. In recent years, the development of quantum dot materials and QLED devices has received more and more attention. Compared with organic light-emitting diode devices, the light-emitting layer in QLED devices is composed of inorganic nanoparticles. In the current mainstream QLED production process, the electron transport layer uses inorganic metal oxide nanomaterials, which are a kind of direct bandgap wide bandgap nanoparticles with high electron mobility. However, the electron transport layer is usua...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H10K2102/00H10K2102/331H10K71/00
Inventor 陈雨
Owner JIAXING NADING PHOTOELECTRIC TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products