Composition for stable storage at room temperature and preparation method of quantum dot light emitting diode device
A composition and stable technology, applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor QLED device effect and increase of enterprise production cost, etc.
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Embodiment 1
[0054] (1) ITO cleaning: put the ITO glass piece into a beaker filled with acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes in sequence. Place the washed ITO in a vacuum oven and dry for later use.
[0055] (2) An electron transport layer ZnO was spin-coated on the ITO conductive glass.
[0056] (3) A hole blocking layer is spin-coated on the electron transport layer.
[0057] (4) Spin-coat a layer of quantum dot luminescent layer on the hole blocking layer.
[0058] (5) Spin-coat a layer of hole transport layer on the quantum dot light-emitting layer.
[0059] (6) A hole injection layer is spin-coated on the hole transport layer.
[0060] (7) On the hole injection layer, a layer of cathode metal Al electrode is evaporated.
[0061] In the above step (2), a ligand and a flocculant are added to the electron transport layer, the ligand is sodium polyacrylate, the flocculant is sodium chloride, and the concentratio...
Embodiment 2
[0064] (1) ITO cleaning: put the ITO glass piece into a beaker filled with acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes in sequence. Place the washed ITO in a vacuum oven and dry for later use.
[0065] (2) An electron transport layer ZnO was spin-coated on the ITO conductive glass.
[0066] (3) A hole blocking layer is spin-coated on the electron transport layer.
[0067] (4) Spin-coat a layer of quantum dot luminescent layer on the hole blocking layer.
[0068] (5) Spin-coat a layer of hole transport layer on the quantum dot light-emitting layer.
[0069] (6) A hole injection layer is spin-coated on the hole transport layer.
[0070] (7) On the hole injection layer, a layer of cathode metal Al electrode is evaporated.
[0071] In the above step (2), a ligand and a flocculant are added to the electron transport layer, the ligand is sodium polyacrylate, the flocculant is sodium chloride, and the concentratio...
Embodiment 3
[0073] (1) ITO cleaning: put the ITO glass piece into a beaker filled with acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes in sequence. Place the washed ITO in a vacuum oven and dry for later use.
[0074] (2) Spin-coat an electron transport layer TiO on the ITO conductive glass 2 .
[0075] (3) A hole blocking layer is spin-coated on the electron transport layer.
[0076] (4) Spin-coat a layer of quantum dot luminescent layer on the hole blocking layer.
[0077] (5) Spin-coat a layer of hole transport layer on the quantum dot light-emitting layer.
[0078] (6) A hole injection layer is spin-coated on the hole transport layer.
[0079] (7) On the hole injection layer, a layer of cathode metal Al electrode is evaporated.
[0080] In the above step (2), a ligand and a flocculant are added to the electron transport layer, the ligand is sodium polyacrylate, the flocculant is sodium chloride, and the concentration ...
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