Semiconductor structure and forming method thereof
A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problems of difficult channel and poor channel control ability of gate structure, so as to improve electrical performance, increase stress and form high quality Effect
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[0028]The currently formed devices still suffer from poor performance. A method of forming a semiconductor structure is now used to analyze the reasons for the poor performance of the device.
[0029]referencefigure 1 withfigure 2 It is a schematic diagram of the structure corresponding to each step in a method for forming a semiconductor structure.
[0030]Such asfigure 1 As shown, the semiconductor structure includes: a substrate, the substrate 1 includes an isolation region I and a device region II; a gate structure 2 is located on the substrate 1, and the gate structure 2 located on the isolation region I serves as Dummy gate structure 21, the gate structure 2 located on the device region II serves as the device gate structure 22; source and drain doped regions 3, located in the substrate 1 on both sides of the gate structure 2; The interlayer dielectric layer 4 is located on the substrate, covers the sidewalls of the gate structure 2 and exposes the top of the gate structure 2.
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