Light-emitting device based on nitride transistor and integrated Micro LED micro display device

[0039] Example 1

[0040] The nitride-based transistor-based integrated microLED micro display includes the above-described nitride transistor-based light-emitting device, and the light emitting device is arranged in a plurality of pixel units, and the drive transistors are driven in the pixel unit. The spacing ranges from 8 to 100 microns. like figure 2 and image 3 As shown, the surface of the pixel unit covers having a package layer 18, in a preferred embodiment, the package layer 18 can be a transparent encapsulating layer. The substrate 1 below the LED chip is provided with an opening through the second surface of the substrate 1, and a transparent matrix 20 is provided in the open hole, and the side wall of the opening is provided with a second reflective layer 19, which is disposed on the transparent matrix 20. There is a prism 23. The prism 23 can function as a concentrating effect, increasing the light, and binds to the first reflective layer 18 and the second reflective laye

[0043] Example 2

[0044] Example 2 The difference from Embodiment 1 is that the blue light-emitting device, the green light-emitting device, and the red light light emitting device are different, and the LED chip is all in the production process of the blue light-emitting device, the green light-emitting device, and the red light emission device. The green LED chip is used. like Figure 4 and 5 As shown, the green light-emitting device 101 can be used as a green LED chip and combined with the transparent matrix 20, it can become a green light light-emitting device 101 that emits green light.

[0045] The LED chip corresponding to the blue light-emitting device 201 and the red light-emitting device 301 is a blue-racer nanocrocolite LED chip formed in the green LED chip. Specifically, the green LED chip epitaxial layer is etched to obtain a nanocrochemical structure, and the green LED epitaxial layer is etched out of the longitudinal direction of the wall thickness, only the thin wall

[0046] Example 3

[0047] Example 3 The difference from Embodiment 1 is that the interval between the drive transistors and the LED chips ranges from nanoscale, such as Image 6 and 7 As shown, the LED chip is used in the production process of the blue light-emitting device 102, the green light-emitting device 202, and the red light-emitting device 302, the LED chip is a LED epitaxial layer having a nanometer scale of the selective molecular beam epitaxial growth. Specifically, the blue light-emitting device 102 includes a blue nanowire LED chip, a green light-emitting device 202 comprising a green nanowire LED chip, and the red light-emitting device 302 includes a red nanowire LED chip. Blu-ray, green light, and red light can be obtained by the size of the control interval. In a preferred embodiment, the blue-ray nanowire LED chip has a diameter of 630 to 640 nm, and the green nanowire LED chip has a diameter of 420 to 440 nm, and the red nanowire LED chip has a diameter of 220 to 24