Three-dimensional memory and forming method thereof

一种存储器、三维的技术，应用在电固体器件、半导体器件、电气元件等方向，能够解决三维存储器制造工艺繁琐、制造成本高等问题

Active Publication Date: 2021-04-20
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a three-dimensional memory and its forming method, which are used to solve the problems of cumbersome manufacturing process and high manufacturing cost of the existing three-dimensional memory, and improve the performance and manufacturing yield of the three-dimensional memory at the same time

Method used

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Embodiment Construction

[0047] The specific implementation of the three-dimensional memory provided by the present invention and its forming method will be described in detail below in conjunction with the accompanying drawings.

[0048] In the process of forming a three-dimensional memory with double-layer channel holes, the current process is generally to first form the underlying stack structure and the connecting layer covering the surface of the underlying stacking structure, and then etch the underlying stacking structure and the connecting layer , forming a lower channel hole; then, depositing a first filling layer on the sidewall of the lower channel hole and the surface of the connection layer; then, removing the sidewall covering the connection layer and the surface of the connection layer by an etching process The first filling layer on the top sidewall of the lower channel hole exposes the connection layer at the sidewall of the lower channel hole; after that, a part of the top part of the...

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Abstract

The invention relates to a three-dimensional memory and a forming method thereof. The forming method of the three-dimensional memory comprises the following steps: providing a substrate, wherein the surface of the substrate is provided with a first stacking structure and a connecting layer covering the surface of the first stacking structure; forming an opening penetrating through the connecting layer and a first channel hole penetrating through the first stacking structure, wherein the opening is communicated with the first channel hole; expanding the feature size of the opening so that the feature size of the bottom of the expanded opening is greater than the feature size of the top of the first channel hole; and forming a filling layer in the opening and the empty first channel hole. According to the invention, the width of the subsequent alignment window of a second channel hole and the first channel hole is increased, the side wall of the first channel hole is prevented from being damaged in the subsequent process, the manufacturing steps of the three-dimensional memory are greatly simplified, and the manufacturing cost of the three-dimensional memory is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory and a forming method thereof. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and pursue lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or not) flash memory and 3D NAND (3D NAND) flash memory. [0003] Among them, 3D NAND memory takes its small size and large capacity as the starting point, and the design concept of highly integrated storage units stacked in three-dimensional mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582
CPCH10B41/35H10B41/27H10B43/35H10B69/00H10B43/27
Inventor 张珍珍刘隆冬李明周颖
Owner YANGTZE MEMORY TECH CO LTD
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