Low-voltage floating gate photoelectric memory and preparation method thereof

[0036] Example 1

[0037] The specific preparation steps are as follows:

[0038] (1) First, a 20nm aluminum gate electrode was evaporated on a glass substrate;

[0039] (2) The first and second dielectric layers were then prepared by spin-coating PMMA toluene and PVA aqueous solutions with concentrations of 10 mg / ml and 2.5 mg / ml, respectively. minutes, with thicknesses of 43nm and 5nm;

[0040] (3) PS (2 mg / ml) and CsPbBr 3 The quantum dot solution (10 mg / ml) was mixed in a volume ratio of 10:3, the spin coating speed was 2000 rpm, the time was 40 seconds, and the residual solvent was removed by heating at 80 °C for 30 min;

[0041] (4) Finally, 50 nm pentacene semiconductor material and 80 nm thick gold electrode were evaporated. The reticle channel length is 50 μm and the width is 1 mm, which is denoted as Cs−30 device. In addition, only PS solution was spin-coated on the second gate dielectric layer as a comparative device, denoted as Cs−0 device.

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[0043] Example 2

[0044] The specific preparation steps are as follows:

[0045] (1) First, a 10nm aluminum gate electrode was evaporated on a glass substrate;

[0046](2) The first and second dielectric layers were then prepared by spin-coating PVP toluene and PVA aqueous solutions with concentrations of 8 mg / ml and 1 mg / ml, respectively. minute;

[0047] (3) PS (1 mg / ml) and CsPbBr 3 The quantum dot solution (1 mg / ml) was mixed at a volume ratio of 10:2, the spin coating speed was 800 rpm, the time was 25 seconds, and the residual solvent was removed by heating at 60 °C for 20 min;

[0048] (4) Finally, a 25 nm pentacene semiconductor material and a 25 nm thick gold electrode were evaporated. The reticle channel length is 50 microns and the width is 1 mm.

[0049] Example 3

[0050] The specific preparation steps are as follows:

[0051] (1) First, a 30nm aluminum gate electrode was evaporated on a glass substrate;

[0052] (2) The first and second dielectric layers were then prepared by spin-coating PS toluene and PVA aqueous solutions with concentrations of 15 mg / ml and 10 mg / ml, respectively. minute;

[0053] (3) PS (10 mg / ml) and CsPbBr 3 The quantum dot solution (10 mg / ml) was mixed in a volume ratio of 10:2, the spin coating speed was 3000 rpm, the time was 60 seconds, and the residual solvent was removed by heating at 100 °C for 60 min;

[0054] (4) Finally, 80 nm pentacene semiconductor material and 150 nm thick gold electrode were evaporated. The reticle channel length is 50 microns and the width is 1 mm.