METHOD OF PRODUCING SiC SINGLE CRYSTAL INGOT

a single crystal, sic single crystal technology, applied in the direction of single crystal growth, polycrystalline material growth, after-treatment, etc., can solve the problem of low throughput of the method of producing a single crystal ingot of sic single crystal in document 1, and achieve the effect of improving the temperature uniformity of raw materials and effectively using raw materials

Pending Publication Date: 2020-05-28
RESONAC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The technical effect of this patented process is that it allows for better control over the temperature inside a crucible used to produce silicon carbide (SiC) single crystals while also improving the efficiency of utilizing the raw materials.

Problems solved by technology

This patent describes a technical problem addressed in the patent text relating to growing larger and longer SiC wafers while maintaining good quality and productivity. Current methods involve cooling the entire crucible containing the raw materials before starting the process, but this can result in poorly utilizing the raw material and reduced growth rates due to crystallization near the edge of the cruve. Additionally, current methods require a lot of space between the cruvelayer and the crucible walls, making them challenging to scale up for higher volume manufacturing needs.

Method used

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  • METHOD OF PRODUCING SiC SINGLE CRYSTAL INGOT
  • METHOD OF PRODUCING SiC SINGLE CRYSTAL INGOT

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Embodiment Construction

[0022]Hereinafter, embodiments of the present invention will be appropriately described in detail with reference to the drawings. In the drawings used in the following description, in order to facilitate understanding of features of the present invention, feature parts are enlarged for convenience of illustration in some cases, and size ratios and the like of components may be different from actual components. Materials, sizes, and the like exemplified in the following description are examples, the present invention is not limited thereto, and they can be appropriately changed and implemented without departing from the spirit and scope of the invention.

“Method of Producing a SiC Single Crystal Ingot”

[0023]The method of producing a SiC single crystal ingot according to the present embodiment is a method of producing a SiC single crystal ingot using a sublimation method in which, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal condu

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Abstract

In a method of producing a SiC single crystal ingot of the present invention, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal conductivity raw material and a low thermal conductivity raw material layer containing a low thermal conductivity raw material in at least one of a position above or below the high thermal conductivity raw material layer are disposed to form a raw material part, and heating is performed so that the raw material part reaches the maximum temperature in the high thermal conductivity raw material layer and a SiC single crystal ingot is grown.

Description

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Claims

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Application Information

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Owner RESONAC CORP
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