5 results about "Nitride semiconductors" patented technology

A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.

A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and Si_xNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

The invention discloses an LED chip and a manufacturing method therefor, and belongs to the technical field of a semiconductor. The LED chip comprises a substrate, and an n type nitride semiconductor layer, a light emitting layer, a p type nitride semiconductor layer, a current barrier layer and a transparent conductive layer which are laminated on the substrate in sequence; a groove which extends to the n type nitride semiconductor layer is formed in the p type nitride semiconductor layer; a passivation layer is arranged on the n type nitride semiconductor layer, the side wall of the groove and the transparent conductive layer; a first through hole which extends to the p type nitride semiconductor layer is formed in the passivation layer on the transparent conductive layer; a p type electrode is arranged in the first through hole; a second through hole which extends to the n type nitride semiconductor layer is formed in the passivation layer on the n type nitride semiconductor layer; an n type electrode is arranged in the second through hole; and a plurality of third through holes which extend to the p type nitride semiconductor layer are formed in the current barrier layer. According to the LED chip, light rays emitted below the current barrier layer can pass through the third through holes to be emitted, so that light output and luminance can be improved.