3 results about "Schottky diode" patented technology

The invention discloses a planar power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device integrated with a junction barrier Schottky diode, which is used for solving the technical problem that conflicts exist when existing junction barrier Schottky cells and MOSFET cells jointly occupy an active region part of the device. The device comprises an epitaxial layer and a plurality of cells which are distributed on the first side surface of the epitaxial layer and have the same shape and structure, each cell at least comprises a well region, a source region, highly-doped P-type regions and a junction barrier Schottky region comprising a preset number of highly-doped P-type regions; a junction field effect transistor (JFET) region is formed between the well regions; a first PN junction is formed between the well region and the epitaxial layer, and a second PN junction is formed between the well region and the source region; a preset number of highly doped P-type regions in the junction barrier Schottky region and the epitaxial layer form a third PN junction; the value range of the distance between the JFET region and the highly doped P-type region is in the same preset interval. Through the device, the problem that conflicts exist when junction barrier Schottky cells and MOSFET cells jointly occupy the active region part of the device is solved.

The invention discloses a 2-18GHz square law detector, which comprises an input matching network, a detector diode and a low-pass filter, and is characterized in that one end of the detector diode isconnected with the input matching network, and the other end of the detector diode is connected with the low-pass filter. The Schottky diode is a P-type Schottky low-barrier detection diode SMS7630-079LF of Skyworks. The detector works in a zero bias state; the working frequency range is 2-18 GHz, the voltage sensitivity is higher than 1500 mV / mW through a rear-stage low-pass filter matched with afront-stage impedance network, the peak value of about 6000 mV / mW at 5 GHz is achieved, the corresponding NEP is superior to 1.49 pW / Hz, the bandwidth is wide, and the harmonic suppression degree ishigh.