Method for dyeing carboxymethyl chitosan silicon-modified cotton fabric with natural dyes

A technology of carboxymethyl chitosan silicon and carboxymethyl chitosan is applied in the field of natural dye dyeing of carboxymethyl chitosan silicon modified cotton fabrics, and can solve the problems of low affinity, dye uptake and color fastness. Not high problems, to achieve the effect of good affinity, improved color fastness to soaping, and reduced dyeing temperature

Inactive Publication Date: 2019-11-26
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology involves adding certain chemicals called chitin that helps bind tiny molecules like water or other substances onto cellulosic materials such as cotton fiber without affecting their structure itself. These binding agents help make them easier to clean up after use on different types of material. Additionally, this treatment improves how well these chemistries work when applied to cotton threads before dying. Overall, this method allows for more efficient removal of impurities from cotton threadings while maintaining its quality and functionality.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the performance of naturally dyestuffed (Natural Dye) garments made up mostly of cottenns without compromising on environmental impact.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1) Take 20g of chitin, soak it in 60% sodium hydroxide solution at 60°C for 8 hours, wash it with hot water until neutral, dry it at 60°C, grind it finely to obtain chitosan;

[0026] 2) Dissolve chitosan in dilute acetic acid, precipitate with excess acetone to obtain chitosan acetate, transfer it to a stirred reaction vessel, add NaOH solution and isopropanol, and add chlorine dropwise while stirring The isopropanol solution of acetic acid is controlled at a reaction temperature of 65° C., reacted for 4 hours, cooled to room temperature, adjusted to neutral pH with dilute acid, washed with 85 wt % methanol, and dried to obtain carboxymethyl chitosan;

[0027] 3) Use 6g / L carboxymethyl chitosan solution, add 5mL glycidyl trimethoxysiloxane, and stir until it is completely dissolved under the condition that the bath ratio is 1:200 and the pH value is adjusted to 8 with ammonia water Carboxymethyl chitosan silicon hybrid system can be obtained;

[0028] 4) Treat the cott

Embodiment 2

[0034] 1) Take 30g of chitin, soak it in 60% sodium hydroxide solution at 60°C for 12h, wash it with hot water until neutral, dry it at 60°C, grind it finely to get chitosan;

[0035] 2) Dissolve chitosan in dilute acetic acid, precipitate with excess acetone to obtain chitosan acetate, transfer it to a stirred reaction vessel, add NaOH solution and isopropanol, and add chlorine dropwise while stirring The isopropanol solution of acetic acid is controlled at a reaction temperature of 65° C., reacted for 4 hours, cooled to room temperature, adjusted to neutral pH with dilute acid, washed with 85 wt % methanol, and dried to obtain carboxymethyl chitosan;

[0036] 3) Use 9g / L carboxymethyl chitosan solution, add 7.5mL glycidyltrimethoxysiloxane, and stir until all Carboxymethyl chitosan silicon hybrid system can be obtained by dissolving;

[0037] 4) Treat the cotton fabric with the above solution in a constant temperature oscillating dyeing machine at 40°C. After treatment for 9

Embodiment 3

[0043] 1) Take 10g of chitin, soak it in 60% sodium hydroxide solution at 60°C for 4 hours, wash it with hot water until it becomes neutral, dry it at 60°C, and grind it finely to obtain chitosan;

[0044]2) Dissolve chitosan in dilute acetic acid, precipitate with excess acetone to obtain chitosan acetate, transfer it to a stirred reaction vessel, add NaOH solution and isopropanol, and add chlorine dropwise while stirring The isopropanol solution of acetic acid is controlled at a reaction temperature of 65° C., reacted for 4 hours, cooled to room temperature, adjusted to neutral pH with dilute acid, washed with 85 wt % methanol, and dried to obtain carboxymethyl chitosan;

[0045] 3) Use 3g / L carboxymethyl chitosan solution, add 2.5mL glycidyltrimethoxysiloxane, and stir until all Carboxymethyl chitosan silicon hybrid system can be obtained by dissolving;

[0046] 4) Treat the cotton fabric with the above solution at 40°C in a constant temperature oscillating dyeing machine.

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Abstract

The invention relates to the field of dyeing and finishing and discloses a method for dyeing a carboxymethyl chitosan silicon-modified cotton fabric with natural dyes. The method adopts a chitin alkaline hydrolysis approach for oxidoreduction to obtain chitosan after drying; glycidyl trimethoxy siloxane is added into a carboxymethyl chitosan solution to prepare a carboxymethyl chitosan silicon-hybrid system solution; a cotton fabric is soaked in the solution in a constant-temperature vibration dyeing machine, washed with water and then dried for later use; absolute ethyl alcohol is adopted forextracting a radix lithospermi dye mother liquor, and the pretreated cotton fabric is put into the radix lithospermi dye mother liquor for dyeing through an ethyl alcohol dissolution assistance approach; the temperature is lowered after dyeing is finished, and washing and drying are performed. When the method is used for dyeing the cotton fabric with the natural dyes, the advantages of simple operation, high dyeing rate, energy conservation and environmental protection are achieved.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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Application Information

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Owner ZHEJIANG SCI-TECH UNIV
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