Interconnection structure based on carbon nanotubes and preparation method
A technology of interconnect structure and carbon nanotubes, applied in nanotechnology, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problem of low filling density of carbon nanotubes, and achieve high mechanical strength and low resistance , the effect of good conductivity
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[0052] Example one
[0053] See Figure 7 This embodiment provides an interconnect structure based on a carbon nanotube, which includes a substrate 101, a first conductive layer 103, an interlayer dielectric layer 104, a first catalyst layer 107, and a second catalyst layer 108. Carbon nanotube layer 109, the second conductive layer 110. Among them, the preparation process, see figure 1 .
[0054] In the present embodiment, in the through hole 106 of the micrometer size, a dense filler of the passage 106 can be realized by having a high filler ratio, such that the through hole 106 can be realized. The carbon nanotube layer 109 has a lower resistance to have good conductivity to meet the needs of large currents, and the carbon nanotube layer having a high filling rate has good thermal stability, high mechanical strength, and The energy consumption can be reduced, so that the carbon nanotube layer 109 having a higher fill rate can be effectively replaced by metal interconnect, electrica
Example Embodiment
[0085] Example 2
[0086] This embodiment also provides another interconnect structure and preparation based on carbon nanotubes, and is mainly in the order of the formation of the catalyst layer and the selection of the catalyst layer. See Figure 8 ~ 14 A schematic structural diagram showing the presence presented by the interconnect structure based on the carbon nanotubes in the present embodiment.
[0087] See Figure 14 This embodiment provides an interconnect structure based on carbon nanotubes, the interconnect structure including a substrate 201, a bottom dielectric layer 202, a first conductive layer 203, an inter-interlayer dielectric layer 204, a first catalyst layer 207, and a second Catalyst layer 208, carbon nanotube layer 209, the second conductive layer 210, and Tin layer 300.
[0088] Wherein, the bottom dielectric layer 202 is located on the substrate 201, the first conductive layer 203 located on the underlying dielectric layer 202, and the inter-layer dielectric lay
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