Luminescent material and electroluminescent display device using the same

[0186]After a glass substrate coated with ITO thin film of a thickness of 1,000 Å was washed, the glass substrate was washed with a solvent such as isopropyl alcohol, acetone and methanol by ultrasonic cleaning and then dried. In this way, an ITO transparent electrode was prepared, and HI-1 was deposited on the ITO transparent electrode at a thickness of 60 nm by thermal vacuum as a hole injecting material and then NPB was deposited at a thickness of 80 nm as a hole transporting material. Then, a light emitting layer was formed using the compound 1 obtained by the aforementioned reaction formula 23 as a dopant and using CBP as a host. At this time, a doping concentration was 5%, and a doping thickness was 30 nm. Subsequently, after a compound of ET-1:Liq (1:1) (30 nm) was deposited by thermal vacuum as a material of each of an electron transporting layer and an electron injecting layer, aluminum of 100 nm was deposited to form a cathode, whereby the electroluminescent display device...

[0187]The electroluminescent display device according to the embodiments 2 to 7 was manufactured by the same method as that of the embodiment 1 except that a compound of Table 1 below is used as a dopant of a light emitting layer instead of the compound 1.

[0191]The electroluminescent display device according to the embodiments 8 to 15 was manufactured by the same method as that of the embodiment 1 except that a compound of Table 2 below was used as a dopant of a light emitting layer instead of the compound 1.