Barrier material

[0012]The invention relates generally to barrier materials used in the fabrication of ICs. More particularly, the invention relates to barrier materials which inhibit the diffusion of hydrogen atoms. Such barrier materials are particularly useful for protecting ferroelectric capacitors against the deleterious effects of hydrogen atoms. The barrier material can also be used for protecting other types of device features from hydrogen or harmful elements such as oxygen.

[0013]FIG. 3 shows a cross-section of a COP structure 307 in accordance with one embodiment of the invention. The COP structure comprises a capacitor 340 coupled to a plug 315. The capacitor comprises top and bottom electrode 342 and 341 separated by a dielectric layer 346. In one embodiment, the capacitor comprises a ferroelectric capacitor wherein the dielectric layer comprises a ferroelectric material such as PZT. Other types of ferroelectric materials, including SBT, are also useful. The electrodes can be formed from a