Hole transport material, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A hole-transporting material and hole-transporting layer technology, used in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc. Transport performance, high hole transport ability, effect of improving stability

Active Publication Date: 2019-06-25
TCL CORPORATION
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  • Application Information

AI Technical Summary

Benefits of technology

This patented technology provides an improved type for organic light emission devices (OLEDS). It uses special materials called grainynes that have good charge carrying ability but poor hole conductivity. These materials help control how much electricity flows through them while still allowing holes or electrons to pass freely within their structure. They may include other metals like platinum or gold, making these OELSDs more durable over long periods of use compared to previous designs. Overall, this new design allows better performance and lifespan of OLDESS components such as LED displays.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving quantum dot-based solid state light sources (QL) due to their poor luminosity, reduced brightness at longer wavelengths, decreased emitting efficacy over shorter periods of time, and potential damage from water vapor or other substances during operation caused by moisture absorption on indium tin oxide surfaces.

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  • Hole transport material, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

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preparation example Construction

[0024] Finally, the present invention also provides a method for preparing a QLED device. The QLED device is a positive QLED device, and the QLED device includes a hole transport layer. The preparation method includes the following steps:

[0025] S01: providing a substrate, the substrate is provided with an anode;

[0026] S02: Provide a mixed colloid solution dispersed with graphyne and p-type metal oxide nanoparticles, deposit the mixed colloid solution on the anode, and dry to obtain a hole transport layer.

[0027] Alternatively, the QLED device is an inverted QLED device, and the QLED device includes a hole transport layer, and the preparation method includes the following steps:

[0028] T01: providing a substrate on which a quantum dot light-emitting layer is provided;

[0029] T02: providing a mixed colloidal solution dispersed with graphyne and p-type metal oxide nanoparticles, depositing the mixed colloidal solution on the quantum dot light-emitting layer, and drying

Embodiment 1

[0044] Taking molybdenum oxide and graphyne powder to prepare graphyne-doped hole transport layer as an example to introduce in detail:

[0045] First disperse molybdenum oxide with a particle size below 450nm in ultrapure water (the concentration of molybdenum oxide is 60-100mg / mL) and stir thoroughly, take graphyne powder with a particle size below 45nm, and evenly disperse it in the molybdenum oxide aqueous solution , wherein the mass ratio of graphyne to molybdenum oxide is (2-10): 100, stirred at a rate of 3000rpm / min for 30 minutes until the solution is completely uniform, and a graphyne-molybdenum oxide mixed colloid solution is obtained.

[0046] The graphyne-molybdenum oxide mixed colloid solution was spin-coated on the anode substrate, heated to 120° C. on a heating platform and kept for 15 minutes to form a hole transport layer.

Embodiment 2

[0048] Taking tungsten oxide and graphyne powder to prepare graphyne-doped hole transport layer as an example to introduce in detail:

[0049] First disperse tungsten oxide with a particle size below 450nm in ultrapure water (the concentration of tungsten oxide is 60-100mg / mL) and stir thoroughly, take graphyne powder with a particle size below 45nm, and disperse it evenly in an aqueous tungsten oxide solution , wherein the mass ratio of graphyne to tungsten oxide is (2-10): 100, stirring at a rate of 3000rpm / min for 30 minutes until the solution is completely uniform, and a graphyne-tungsten oxide mixed colloidal solution is obtained.

[0050] The graphyne-tungsten oxide mixed colloid solution was spin-coated on the anode substrate, heated to 120° C. on a heating platform and kept for 15 minutes to form a hole transport layer.

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Abstract

The invention belongs to the technical field of photoelectric materials, and specifically relates to a hole transport material, a QLED (Quantum dot Light-Emitting Diode) device and a preparation method thereof. The hole transport material comprises p-type metal oxide nanoparticles and graphdiyne dispersed in the p-type metal oxide nanoparticles. The material of a hole transport layer of the QLED device includes the hole transport material. By adding the graphdiyne with high hole mobility into the hole transport layer and by virtue of the excellent hole migration ability of the doped graphdiyne, the hole separation ability and hole migration ability of the hole transport layer in the QLED can be significantly improved, the work function of the film material is adjusted, the hole transport efficiency of the device is improved, and the effects of improving the transport and light emitting-emitting efficiency of the device and prolonging the life of the device are achieved.

Description

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Claims

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Application Information

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Owner TCL CORPORATION
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