Power system, power module therein and method for fabricating power module

[0068]FIG. 7B is a schematic internal structure diagram of a power module according to the disclosure. Compared with FIG. 7A, a power module 700b shown in FIG. 7B further includes a capacitor Cin. The capacitor Cin is disposed at a relatively intermediate position between the semiconductor devices Q3 and Q4, and the connection manner and function thereof are similar to that of the capacitor C1 shown in FIG. 4. The relatively intermediate position refers to a scope of areas around the intermediate position, which means the difference of the distance between the capacitor Cin and the semiconductor device Q3 and the distance between the capacitor Cin and the semiconductor device Q4 is within a certain range, and most preferably the difference is zero.

[0069]For example, as shown in FIG. 7B, the capacitor Cin is disposed at an upper intermediate position between the semiconductor devices Q3 and Q4, so that the power module 700b has a symmetric structure. It should be noted that, the posi...

[0070]FIG. 7C is a schematic internal structure diagram of a power module according to the disclosure. Compared with FIG. 7A, the power module 700c shown in FIG. 7C further includes driving pins S1, S2, S3 and S4. The driving pins S1, S2, S3 and S4 are respectively connected to the semiconductor devices Q1, Q2, Q3 and Q4, and are respectively configured to cooperate with the pins G1, G2, G3 and G4 to receive driving signals for driving corresponding semiconductor devices to be turned on, thereby determining turn-on and turn-off of each semiconductor device. Moreover, the driving pins S1 and S2 are disposed symmetrically; the driving pins S3 and S4 are disposed to symmetrically; the driving pin S1 is disposed adjacently between the pin G1 and the common pin VA; the driving pin S2 is disposed adjacently between the pin G2 and the common pin VB; the driving pin S3 is disposed adjacently between the pin G3 and the ground pin GND; and the driving pin 54 is disposed adjacently between the...

[0073]FIG. 7D is a schematic internal structure diagram of a power module according to the disclosure. Compared with FIG. 7C, a power module 700d shown in FIG. 7D further includes a capacitor Cin. The capacitor Cin is disposed at a relatively intermediate position between the semiconductor devices Q3 and Q4, and the connection manner and function thereof are similar to that of the capacitor C1 shown in FIG. 4. Similarly, the position of the capacitor Cin is not limited to that shown in FIG. 7D, and those of skills in the art can dispose the capacitor Cin at any intermediate position inside the power module 700d according to practical demands.

[0074]It can be seen from the aforementioned embodiments that the aforementioned arrangement manner is applied to mainly arrange all the output pins at the same side of the module, and the pins among which the withstand voltage is relatively low is disposed adjacently to form a pin combination. Furthermore, a pin distance (i.e., the minimum dist...