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12 results about "Magnetic layer" patented technology

MLDH (magnetic layered double hydroxides)-Fluorescein intercalation assembled type fluorescent probe

InactiveCN103289678AFacilitates transmembrane transportFacilitate internal absorptionFluorescence/phosphorescenceLuminescent compositionsFluoProbesCell membrane
The invention relates to an MLDH (magnetic layered double hydroxides)-Fluorescein intercalation assembled type fluorescent probe. The invention is characterized in that the MLDH-Fluorescein intercalation assembled type fluorescent probe is prepared by a low-temperature ion exchange reaction, with MLDH as carriers and fluorescein as an intercalation object. The synthesized MLDH-Fluorescein probe has superparamagnetism, bright fluorescence signals, high thermal stability, strong nuclear targeting property in cell transmission, and capability of quickly infiltrating a cell membrane and passing through cytoplasm to deliver a fluorescent material to cell nucleus and enrich the fluorescent material to a nucleolus, so that the MLDH-Fluorescein probe can be used as a fluorescent probe for researching a cell transport mechanism of an MLDH system and evaluating the nuclear targeting transmission efficiency. The MLDH-Fluorescein intercalation assembled type fluorescent probe is applicable to establishment of a fluorescein, fluorandiol marked medicament or biomolecular targeting transport system and has the advantages of bright fluorescence signals, high storage stability, integration of multiple functions, simplicity in operation, low cost and the like.
Owner:NINGXIA MEDICAL UNIV

Magnetic tunnel junction forming method and magnetic resistance random access memory

PendingCN110061128AMagnetic-field-controlled resistorsDigital storageNuclear magnetic resonanceMagnetic layer
The invention discloses a magnetic tunnel junction forming method comprising the steps of providing a substrate on which a bottom electrode is formed; and forming a magnetic tunnel junction on the bottom electrode, wherein the magnetic tunnel junction is composed of a first magnetic layer, a tunneling layer and a second magnetic layer sequentially stacked from the bottom up, both the first magnetic layer and the second magnetic layer have vertical anisotropy, when a current from the second magnetic layer to the first magnetic layer exists, the magnetic moment direction of the second magnetic layer is the same as that of the first magnetic layer, and when the direction of the current is opposite, the magnetic moment direction of the second magnetic layer is opposite to that of the first magnetic layer; ferromagnetic particles are injected into the junction of the tunneling layer and the first magnetic layer; and the magnetic moment direction of the ferromagnetic particles is the same asthat of the first magnetic layer. According to the method, the tunneling resistance ratio of the magnetic tunnel junction is improved, the property of the magnetic layer is not changed, and thus thenegative effects are not generated on the other magnetoelectric parameters of the tunnel junction. The invention also discloses a magnetic resistance random access memory.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Laser programming write-in device and method for magnetoresistive device

ActiveCN113029208ARealize high-precision laser writing programmingImprove manufacturing defectsManufacture of electrical instrumentsRecord information storageControl layerMaterials science
The embodiment of the invention discloses a laser programming write-in device and method for a magnetoresistive device. The device comprises a substrate, a magnetoresistive sensor and a thermal control layer which are stacked in sequence, wherein a non-magnetic insulating layer used for electrical isolation is arranged between the magnetoresistive sensor and the thermal control layer, the magnetoresistive sensor is composed of magnetoresistive sensing units, the magnetic resistance sensing unit is of a multi-layer thin film stacking structure with an antiferromagnetic layer; the laser programming write-in device is used for changing film layer parameters of the thermal control layer and / or the magnetoresistive sensor in the laser programming write-in stage so as to adjust the change rate of the temperature of the magnetoresistive sensor along with the laser power, and the temperature written into the magnetoresistive sensor at the same laser power is increased or decreased; the film layer parameters comprise at least one of a film layer material and a film layer thickness. According to the method, high-precision laser writing programming of the magnetoresistive sensor is realized, manufacturing defects of the magnetoresistive sensor are improved, the performance of the magnetoresistive sensor is improved, and detection precision of the magnetoresistive sensor is further improved.
Owner:MULTIDIMENSION TECH CO LTD

Free layer of magnetic tunnel junction, magnetic tunnel junction and spin transfer torque magnetic random access memory

PendingCN114678464AInhibited DiffusionLower write currentMagnetic-field-controlled resistorsGalvano-magnetic material selectionRandom access memorySpin-transfer torque
The invention belongs to the technical field of magnetic tunnel junctions, and particularly relates to a free layer of a magnetic tunnel junction, the magnetic tunnel junction and a spin transfer torque magnetic random access memory. The free layer provided by the invention comprises a first ferromagnetic layer, a spacing layer and a second ferromagnetic layer which are in contact in sequence; the thickness of the first ferromagnetic layer and the thickness of the second ferromagnetic layer are both smaller than or equal to 1 nm, and the thickness of the second ferromagnetic layer is smaller than that of the first ferromagnetic layer. The spacer layer comprises at least two non-magnetic elements. According to the invention, the thickness of the first ferromagnetic layer and the second ferromagnetic layer in the free layer structure is controlled to be less than 1nm, so that the STT efficiency is effectively improved, and the write-in current is reduced; meanwhile, the spacer layer in the free layer structure is composed of at least two different non-magnetic elements, and the two elements have high binding energy, so that the stability of the spacer layer structure is ensured, element diffusion caused by thickness reduction of the magnetic layer is inhibited, and the erasing resistance is improved.
Owner:ZHEJIANG HIKSTOR TECHOGY CO LTD

Common mode filter and electronic equipment

PendingCN114300234ASmall difference in equivalent permeabilityImprove filtering effectTransformersTransformers/inductances coils/windings/connectionsElectrical connectionFilter effect
The invention discloses a common mode filter and electronic equipment. The common-mode filter comprises a dielectric layer, and a first magnetic layer, a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a second magnetic layer which are stacked in sequence. Every two adjacent layers are isolated through a dielectric layer; the second electrode layer comprises a first sub-coil and a second sub-coil which are insulated, and the two coils surround in the same direction and are electrically connected with the input electrode on the first side; the third electrode layer comprises a third sub-coil and a fourth sub-coil which are insulated, the two coils surround in the same direction and are electrically connected with the output electrode on the second side, the third sub-coil is electrically connected with the first sub-coil, and the fourth sub-coil is electrically connected with the second sub-coil; the second side and the first side are oppositely arranged; the first electrode layer is electrically connected with the fourth electrode layer. According to the invention, the filtering effect of common-mode noise can be improved, and the signal loss can be reduced.
Owner:SHENZHEN SUNLORD ELECTRONICS

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

ActiveUS20170062708A1Magnetic-field-controlled resistorsPhotomechanical apparatusResistLithographic artist
A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
Owner:INT BUSINESS MASCH CORP
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