Light control-based organic spin memory cell

The invention provides a light control-based organic spin memory cell. A structure of the memory cell comprises the following components from bottom to up in order: a bottom electrode, a ferromagnetic metal layer 1, an organic nonferromagnetic layer, a ferromagnetic metal layer 2, and a top electrode; the bottom electrode comprises one or more of gold, platinum, copper or other nonferromagnetic metal materials; the ferromagnetic metal layer 1 comprises one or more of iron, cobalt, nickel, cobalt-iron-boron, nickel-iron, lanthanum strontium manganese oxide, Heusler alloy or other ferromagnetic materials; the nonferromagnetic layer organic material comprises aluminum tris-(8-hydroxyquinoline) (Alq3), alpha-sexithiophene (6T) or other photosensitive organic materials; the ferromagnetic metal layer 2 comprises one or more of cobalt, cobalt-iron, cobalt-iron-boron, Heusler alloy or other ferromagnetic materials; the top electrode comprises one or more of gold, platinum, copper or other nonferromagnetic metal materials.