Manufacturing method of film transistor matrix substrate

[0036] Please refer to image 3 , image 3 A schematic top view of the transistor array substrate (pixel unit structure) formed by a four-pass mask process according to a preferred embodiment of the present invention is shown. The transistor array substrate includes gate lines (scanning lines) 10 , signal lines or signal electrodes (data lines) 20 , gate electrodes 30 , pixel electrodes 40 , island-shaped semiconductors 50 , and source / drain electrodes 60 and 70 .

[0037] Please refer to Figure 4A to Figure 4D , Figure 4A to Figure 4D along image 3 As shown by the I-I' section line in the figure, it is a cross-sectional schematic diagram of the manufacturing process of the transistor array substrate formed by the four-pass mask process. Please refer to Figure 4A , on the transparent substrate 200, a conductive layer is defined by a mask process to form gate electrodes 30 and gate lines (scanning lines) (not shown). The transparent substrate 200 may be, for example, a