Method of making semiconductor devices having protruding contacts

FIG. 3 shows a cross sectional view of a semiconductor device according to a preferred embodiment of the present invention. Provided inside a semiconductor chip 31 is an active layer 32 comprising transistors, wirings, contacts, or like structures. On the active surface of semiconductor chip 31, chip electrodes 33 such as Al electrodes are formed at intervals of approximately 30 .mu.m. The chip electrode of the present embodiment comprises an Al material, containing about 0.5% Cu, having a thickness of approximately 0.6 .mu.m. The main material for chip electrode 31, however, is not limited to Al, but the chip electrode may comprise a material containing Cu as the principal ingredient.

Formed on the active surface of semiconductor chip 31 is a protection layer 34, which is a silicon nitride film approximately 0.8 .mu.m thick. The protection layer 34 is provided with openings each having a 15 .mu.m inner diameter disposed at appropriate intervals for exposing the chip electrodes 33 of se