7 results about "Magnetoresistance" patented technology

The present invention discloses a silicon base tunneling magnetoresistance micro gyroscope, which comprises: a bonding substrate; a liner frame, wherein the liner frame is arranged above the bonding substrate and connected with the bonding substrate; a ferromagnetism film, wherein the ferromagnetism film is arranged on a center position of a rectangular groove formed by combination of the bonding substrate and the liner frame; and a micro gyroscope, wherein the micro gyroscope is arranged above the liner frame, is connected with the liner frame, and comprises a sensitive mass block correspondingly arranged above the rectangular groove, the upper surface of the sensitive mass block is provided with a giant magnetic resistance, the position of the giant magnetic resistance and the position of the ferromagnetism film are corresponding, and the giant magnetic resistance layer can vibrate along with the sensitive mass block along a direction perpendicular to the upper surface of the ferromagnetism film. According to the micromachined gyroscope of the present invention, the whole structure design is adopted, the structure is reasonable and compact, circuit detection is simple, the use is convenient, reliability is good, and the gyroscope is applicable for miniaturization.

Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.

The invention discloses a method for measuring organic magnetic resistance of organic semiconductors. The method comprises the steps that first conductance values of the organic semiconductors under the environment without applied magnetic fields are measured; second conductance values of the organic semiconductors under the environment of the applied magnetic fields are measured; and the organicmagnetic resistance is obtained according to the first conductance values and the second conductance values. Through the disclosed method, the magnetic resistance of different organic semiconductor materials can be obtained easily and accurately, then the organic magnetic resistance effects of different organic material devices under different temperatures, electric field intensity, magnetic fields and carrier concentrations can be obtained, and the universal physical method is provided for studying microphysical mechanisms of the different types of organic magnetic resistance devices.

The invention discloses a magnetic random access memory storage unit and a magnetic random access memory. The storage unit comprises a reference layer, a barrier layer and a first free layer which are stacked from bottom to top, a second free layer is further arranged above the first free layer, a vertical magnetic coupling layer is arranged below the second free layer, and a magnetic damping barrier layer is arranged above the second free layer; the second free layer has a weaker magnetization intensity vector but stronger perpendicular magnetic anisotropy than the first free layer; the vertical magnetic coupling layer provides additional vertical interface anisotropic sources for the first free layer and the second free layer and is used for realizing ferromagnetic coupling of the first free layer and the second free layer, so that a magnetization vector in the second free layer is always parallel to a magnetization vector in the first free layer; the magnetic damping barrier layer provides an additional source of anisotropy to the second free layer while reducing the magnetic damping coefficient of a film layer. Due to the addition of the second free layer, the thickness of the free layer is increased, the magnetic damping coefficient is reduced, the tunneling magnetoresistance (TMR) and a thermal stability factor are increased, and the critical write current is not increased.