Quantum dot thin film, preparation method of quantum dot thin film and battery device

A technology of quantum dots and quantum dot solutions, applied in the field of quantum dots, to achieve the effect of improving deep energy level capture, simple operation, and easy repeatability

Active Publication Date: 2019-07-09
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research on the effect of ligands on quantum dot solid-state films mainly focuses on the chemical properties of the ligands on the surface of quantum dots (such as the functional groups of the ligands, the surface binding properties of the ligands, the length of the ligand molecules, etc.). The study of the effect of the dot surface on the physical state of the ligand molecule (ie, the macroscopic state of the ligand: solid or liquid) on the electrical properties of the quantum dot solid film has not been reported

Method used

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Examples

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Effect test

preparation example Construction

[0021] Correspondingly, a kind of preparation method of quantum dot thin film comprises the following steps:

[0022] S01: providing a first quantum dot solution, the first quantum dot solution contains quantum dots with initial ligands bound to their surfaces;

[0023] S02: providing a cationic precursor, adding the cationic precursor to the first quantum dot solution, and performing passivation treatment to obtain a second quantum dot solution;

[0024] S03: providing a thiol ligand, adding the thiol ligand to the second quantum dot solution, performing surface ligand exchange, and obtaining a third quantum dot solution;

[0025] S04: Depositing the third quantum dot solution on a substrate to obtain the quantum dot film.

[0026] The preparation method of the quantum dot film provided by the embodiment of the present invention firstly adds an appropriate amount of cation precursors to the quantum dot mixture to passivate the quantum dots, so that the surface of the quantum...

Embodiment 1

[0039] Preparation of PbS quantum dots

[0040] 1) Lead oleate {Pb(OA) 2} Preparation of precursors:

[0041] Take 0.6mmol of lead acetate trihydrate, 2ml of oleic acid (OA), and 10mL of octadecene (ODE) into a three-necked flask, first ventilate at room temperature for 20min, then raise the temperature to 150°C and stir for 30min, then lower the temperature to 120°C.

[0042] 2) Preparation of sulfur (S) precursor:

[0043] Add 4mmol of S to 6ml of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C.

[0044] 3) After raising the temperature of the mixed solution in 1) to 150°C, take 2mL of sulfur (S) precursor and quickly inject it into the flask to react for 10 minutes, quickly take out the heating mantle and wait for the temperature of the mixed solution to cool down to room temperature, then extract by adding The oil-soluble PbS near-infrared quantum dots are obtained by centrifugal separation and cleaning of the solvent and the precipitant, and t...

Embodiment 2

[0046] Pb(OA) 2 The passivated PbS quantum dots were prepared as follows:

[0047] 1) Take the PbS quantum dot solution (quantum dot weight is 100mg) in the above-mentioned embodiment 1 and disperse it in 10mL of 18 dilute solution. Under an inert gas, first carry out normal temperature exhaust for 20min, then raise the temperature of the quantum dot solution to 150 ℃.

[0048] 2) Take 0.5mmol of PbO, 1mmol of oleic acid (OA), and 5mL of octadecene into a 25mL three-necked flask to dissolve at 170°C under inert gas and then cool to room temperature for later use.

[0049] 3) Pb(OA) in 2) 2 The solution was added to the quantum dot solution in 1) for passivation for 30 minutes, and then the temperature of the mixed solution was lowered to 100° C. to maintain a constant temperature.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot thin film, a preparation method of the quantum dot thin film and a battery device. The quantum dot thin film comprises quantum dots; the surfaces of the quantum dots are combined with thiol ligands; the surfaces of the quantum dots are also combined with cations; and the cations can be combinedwith the thiol ligands. According to the invention, by combining the surfaces of the quantum dots in the quantum dot thin film with the cations, a combination rate of the thiol ligands and metal elements on the surfaces of the quantum dots can be effectively improved, so as to effectively over the surface defect caused by a case that the thiol ligands on the surfaces of the quantum dots flow to drive metal atoms on the surfaces of the quantum dots to flow, thereby improving light absorption intensity of the quantum dot thin film and improving efficiency of a battery photovoltaic device.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot thin film, a preparation method thereof, and a battery device. Background technique [0002] The large specific surface area of ​​quantum dots indicates that the electrical and optical properties of quantum dots are dominated by surface electronic states, especially those with a band gap; therefore, understanding and controlling the electronic states on the surface of quantum dots and utilizing these electrical properties Doing some practical application is an important research topic. [0003] The electrical properties of colloidal semiconductor quantum dots are more important, which mainly depend on the ligands on the surface of colloidal quantum dots. Colloidal quantum dots synthesized by different methods have different types of ligands on the surface. Passivation of properties and surface charges is critical. When using colloidal quantum dots...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K71/12H10K30/35H10K2102/00Y02E10/549
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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