Semiconductor device with insulated gate transistor cell and rectifying junction

A technology of insulated gate transistors and semiconductors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., and can solve problems such as drift and accelerated gate threshold voltage

Active Publication Date: 2021-08-31
INFINEON TECH AG
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a negative voltage at the gate terminal may accelerate gate threshold voltage drift

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which semiconductor devices may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present disclosure. For example, features illustrated or described with respect to one embodiment can be used on or in conjunction with other embodiments to yield still a further embodiment. It is intended that the present disclosure includes such modifications and variations. The examples have been described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not to scale and are for illustrative purposes only. If not stated otherwise, corresponding elements in the different figures are indicated by the same reference numerals.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
internal resistanceaaaaaaaaaa
Login to view more

Abstract

A semiconductor device with an insulated gate transistor cell and a rectifying junction is disclosed. The semiconductor device (500) includes an insulated gate transistor cell (TC), a drain / drift region (130), a cathode region (410), an anode / separation region (420), and a source electrode (310). The insulated gate transistor cell (TC) includes a source region (110) and a gate electrode (155). The source region (110) is formed in a silicon carbide body (100). The cathode region (410) is formed in the silicon carbide body (100). The gate electrode (155) and the cathode region (410) are electrically connected. The cathode region (410), the source region (110), and the drain / drift region (130) have a first conductivity type. The anode / separation region (420) has a second conductivity type and is formed between the cathode region (410) and the drain / drift region (130). The source electrode (310) and the source region (110) are electrically connected. The source electrode (310) and the anode / separation region (420) are in contact with each other. A rectifying junction (490) is electrically coupled between the source electrode (310) and the cathode region (410).

Description

technical field [0001] Examples of the present disclosure relate to a semiconductor device having an insulated gate transistor cell, and in particular, to a semiconductor device having an insulated gate transistor cell and a rectifying junction between a gate electrode and a source electrode of the insulated gate transistor. Background technique [0002] One aspect to consider for MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is the drift of the gate threshold voltage VGS(th) under long-term operation. The dynamic component of the gate threshold voltage shift may depend on the switching frequency and the selected gate-to-source voltage for turning off VGS(off). For example, a negative voltage at the gate terminal may accelerate gate threshold voltage drift. Design guidelines aimed at limiting the increase in the on-state resistance RDS(on) of SiC MOSFETs recommend specific operating regions for the minimum turn-off voltage VGS(off), switching frequency and tu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/16
CPCH01L29/7806H01L29/1608H01L27/0629H01L21/8213H01L29/7813H01L27/0255H01L29/7397H01L29/872H01L29/45H01L29/8611H01L29/861H01L29/7804H01L29/1095H01L29/7803H01L29/405H01L29/47
Inventor T·巴斯勒H-G·埃克尔J·富尔曼D·皮特斯F·斯托默
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap