Low temperature formation of backside ohmic contacts for vertical devices
a vertical device and low temperature technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical equipment, etc., can solve the problems of limited electrical conductivity of semiconductors, difficult even when properly conducted, and production using silicon carbide substrates
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[0023]The present invention is a semiconductor device incorporating an ohmic contact and a method of forming the ohmic contact.
[0024]It will be understood by those familiar with wide bandgap semiconductors, such as silicon carbide, and semiconductor devices formed therefrom that the invention is most useful in making a semiconductor device and ohmic contact utilizing n-type or p-type silicon carbide (“SiC”). Accordingly, for ease of explanation, the following description of the invention and examples will be directed toward an embodiment of the invention utilizing SiC. Those skilled in the art, however, will readily recognize that the invention may be easily adapted for use with other semiconductor materials such as silicon, gallium nitride, aluminum gallium nitride, and indium gallium nitride. As used herein, aluminum gallium nitride and indium gallium nitride include compounds where the mole percents of aluminum and gallium or indium and gallium equal 1.
[0025]In a broad aspect the...
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