15 results about "Semiconductor materials" patented technology

A semiconductor device is disclosed that includes a semiconductor substrate having a first surface and a second surface and a first conductivity type and at least one epitaxial layer on the first surface of the semiconductor substrate. The epitaxial layer is formed of a material with a dissociation temperature below that of the semiconductor substrate. A zone of increased carrier concentration is in the semiconductor substrate and extends from the second surface of the semiconductor material toward the first surface. A layer of metal is deposited on the second surface of the semiconductor substrate and forms an ohmic contact at the interface of the metal and the zone of increased carrier concentration.

A process for preparing polycrystal silicon includes preparing non-crystal silicon film on glass substrate, preparing a thin Ni layer, photoetching the Ni layer to become fine lines, laser annealing, removing excessive Ni, and laser annealing again for crystallizing the silicon film. Its advantages are short time and low substrate temp.

A depleted body heterojunction quantum dot solar cell is formed by successively superposing FTO, TiO2, TiO2, a PbS quantum dot and Au, wherein the FTO is served as a substrate anode; the TiO2 is served as a barrier layer; the TiO2 is served as a n-type layer; the PbS quantum dot is served as a p-type layer and the Au is served as an electrode layer; the TiO2 and the PbS quantum dot form an active layer. The manufacturing method comprises the following steps: successively spinning and coating a barrier layer TiO2 film, an active layer TiO2 film, the PbS quantum dot and a MPA methanol solution on a cleaned and dried substrate; then carrying out vacuum thermal evaporation so as to plate a gold electrode. The invention has the following advantages that: in the active layer of the solar cell, a n-type semiconducting material and the p-type quantum dot are crosswise mixed so as to form a plurality of heterojunctions; the quantum dot is used on the body heterojunction solar cell so that a structure advantage of the body heterojunction structure is used and an unique nature of the quantum dot can be used too, and conversion efficiency of the solar cell can be improved; the manufacturing method of the solar cell has a simple process, is easy to be performed and is beneficial to be popularized and applied in a large scale.

The invention relates to a two-dimensional organic-inorganic hybrid double perovskite semiconductor crystal and a preparation method and application thereof. The invention relates to an organic-inorganic hybrid double perovskite semiconductor crystal. The chemical formula of an inorganic-organic hybrid semiconductor material is (C6H5CH2NH3) 4AgBiBr8. According to the invention, the organic-inorganic hybrid double-perovskite semiconductor crystal is prepared, and the organic-inorganic hybrid double-perovskite semiconductor crystal is prepared into a planar photoconductive detector, so that high-sensitivity detection of an intrinsic absorption spectrum can be realized. Laser with the wavelength of 405 nm is used for irradiating the single crystal detector, and the photoelectric response of the single crystal detector is tested. When the power density of incident light is 50.9 mW / cm < 2 >, the crystal device shows an obvious photoconductive effect, and the ratio of light current to dark current can reach 1.8 * 10 < 3 >. The result shows that the material has potential application value when being used as a photoconductive detector.

The invention discloses a carbon doping device and a carbon doping method for growing semi-insulating gallium arsenide single crystals, and relates to the technical field of semiconductor materials. The device comprises a quartz tube and a PBN crucible set, the PBN crucible set is arranged in the quartz tube, and sealing chucks are installed at the two ends of the quartz tube; pipelines are respectively arranged at two ends of the quartz tube, namely an inflation pipeline and an exhaust pipeline; a third on-off valve is arranged on the gas filling pipeline, two branch gas pipelines which are connected in parallel are arranged on the upstream of the gas filling pipeline and are respectively called an oxygen filling pipeline and a carbon filling pipeline, the oxygen filling pipeline is connected with an oxygen source, and the carbon filling pipeline is connected with a carbon gas source, wherein the on-off of the oxygen source or the carbon gas source is controlled through the valves; the downstream of the exhaust pipeline is provided with two branch air pipelines which are connected in parallel and are respectively called a deflation pipeline and a vacuumizing pipeline, the deflation pipeline is provided with a valve, and the vacuumizing pipeline is connected with a vacuumizing device. According to the invention, an oxygenating baking process and a C deposition process can be respectively implemented, and the two processes are sequentially carried out on the same equipment, so that the equipment is simplified, and the heat energy loss is reduced.