16 results about "Gallium nitride" patented technology

The invention discloses a method for preparing a self-supporting mono-crystal gallium nitride substrate, comprising the following steps: a layer of masking film is grown on a GaN heteroepitaxal substrate, and a series of growth windows are opened on the masking film, and then a GaN nucleating layer, a GaN template layer and a GaN thick film are sequentially grown, and then the heteroepitaxal substrate is peeled by laser light. The method is a two-step stress relief method: the first step adopts side extension technology, one part of area of a sample is connected with the heteroepitaxal substrate, so as to release partial stress naturally; the second step adopts laser peeling technology to peel the sample from the heteroepitaxal substrate, and then partial stress is released again. The self-supporting mono-crystal gallium nitride substrate prepared by the invention has uniform stress relief and high finished product ratio and is suitable for large-scale industrial production.

The invention discloses a method for preparing a light emitting element. The method comprises the following steps: growing gallium nitride on a flat sheet or a graphic substrate which is plated with AIN, and further performing annealing treatment in the presence of H2 or combined thermal treatment in the presence of H2 and NH3. Therefore, the problem of stress of a buffer material is changed, the epitaxial wafer warping caused by the stress is alleviated, the epitaxial quality of the light emitting element is improved, and the light emission efficiency of the light emitting element is improved.

The invention relates to a gallium nitride semiconductor film, a gallium nitride-based light emitting dioxide and a corresponding preparation method therefor. The preparation method for the gallium nitride semiconductor film comprises the following steps of: bombarding a gallium-containing target and a substrate by using double ion sources, respectively, and filling the primary ion source with argon to generate argon ion beams to bombard the gallium-containing target and generate sputtering particles which are deposited on the substrate; and filling the secondary ion source with ammonia or nitrogen to generate nitrogen ions to bombard the surface of the substrate, wherein the nitrogen ions are combined with the sputtering particles deposited on the surface of the substrate to generate the gallium nitride semiconductor film. According to the invention, the primary ion source generates the argon ions to bombard the gallium-containing target and the nitrogen ions generated by the secondary ion source generate gallium nitride by virtue of a chemical reaction, and the nitrogen ions are directly supplemented to the surface of the substrate by way of shallow injection, so that the content of element nitrogen in the gallium nitride semiconductor film can be effectively improved, and the proportioning error of the element nitrogen and the element gallium is overcome, and the prepared thin is uniform in thickness and high in precision.

In the process for production of a gallium nitride-based compound semiconductor light emitting device, when an n-type semiconductor layer, a light emitting layer obtained by alternately stacking an n-type dopant-containing barrier layer and a well layer, and a p-type semiconductor layer, composed of gallium nitride-based compound semiconductors, are grown in that order on a substrate, the ratio of the supply rates of n-type dopant and Group III element during growth of the barrier layer (M/III) is controlled to a range of 4.5×10⁻⁷≦(M/III)<2.0×10⁻⁶ in terms of the number of atoms.

The invention discloses a preparation method of a light emitting diode epitaxial wafer, and belongs to the technical field of a semiconductor. The preparation method comprises the steps of providing an AlN sapphire substrate; enabling a non-doped gallium nitride layer to be grown on the AlN sapphire substrate; enabling an N type gallium nitride layer to be grown on the non-doped gallium nitride layer; enabling a multi-quantum-well layer to be grown on the N type gallium nitride layer; enabling an electron barrier layer to be grown on the multi-quantum-well layer; and enabling a P type galliumnitride layer to be grown on the electron barrier layer, wherein the electron barrier layer is a P type doped aluminum gallium nitrogen layer; and the surface, for growing the P type gallium nitride layer, of the electron barrier layer is a nitrogen polarized surface. By setting the surface, with the P type gallium nitride layer, of the electron barrier layer into the nitrogen polarized surface, the contact between the electron barrier layer and the P type gallium nitride layer is closer due to the fact that the nitrogen polarized surface is more uneven in a concave and convex manner than themetal polarized surface, so that the ohmic contact resistance is low, the short channel effect is weak, hole injection can be promoted, the recombination efficiency of holes and electrons can be improved, and the luminous efficiency of the light emitting diode is improved.

The invention is applied to the technical field of lighting emitting diodes (LED), and provides an extension structure of an LED. The extension structure comprises a substrate 1, a transition layer 2, an u type gallium nitride layer 3, an n type gallium nitride layer 4, a quantum well layer 5 and a p type gallium nitride layer 6; the electron concentration of the n type gallium nitride layer 4 is gradually varied, and the electron concentration at the side far from the quantum well layer 5 is higher than that at the side close to the quantum well layer 5. The extension structure of the LED is simple in structure and convenient to manufacture; the problem of non-uniform current density distribution in the prior art is overcome; the current expansion is raised; the non-uniform current distribution is reduced; the lighting efficiency and durability of the LED can be effectively improved.

The invention discloses a manufacture method of a gallium nitride-based semiconductor photoelectric device. A Ni / Au / Ti / Au metal layer is formed on an n type gallium nitride-based semiconductor layer by adopting a vaporizing or sputtering method in sequence, and an n electrode is formed in a stripping or chemical etching method; the 400 to 600 DEG C annealing treatment is performed to the n electrode in the atmosphere including oxygen, therefore causing the n electrode and the n type gallium nitride-based semiconductor layer form an alloy, in the n electrode, the Ni / Au / Ti metal layer is an ohm contact layer, and the Au metal layer at the top layer is taken as a welding cushion layer. Because the n electrode does not include Al with low melting point, the temperature of the annealing treatment is moderate, the original metallurgical phase structure of the electrode can be better maintained, thus the trouble brought to the subsequent capsulation is avoided; further more, the temperature of the annealing treatment is moderate, the heat treatment can be performed to the ohm contact layer and the welding cushion layer together, the degeneration and the hardening of the metal of the welding cushion layer are guaranteed not to be caused meanwhile the separating manufacture of the contact layer and the welding cushion layer is avoided, therefore the process is simplified, the finished product rate is improved, and the cost is reduced.

The invention relates to the technical field of a semiconductor material, and provides a GaN semiconductor device. The GaN semiconductor device comprises a GaN epitaxial layer, a composite dielectric layer, a source, a drain, a grid and an insulation layer, wherein the composite dielectric layer is arranged on the GaN epitaxial layer, the source, the drain and the grid are arranged on the composite dielectric layer, penetrate through the composite dielectric layer and are connected with the GaN epitaxial layer, the insulation layer is arranged on the source, the drain, the grid and the composite dielectric layer, and the material of the insulation layer is silicon dioxide. By the GaN semiconductor device, an aluminum nitride Ga layer is difficult to break down, the problems of electric leakage and breakdown occurring in the GaN semiconductor device are further prevented, the GaN semiconductor device is effectively protected, and the reliability of the GaN semiconductor device is improved.

An infrared - visible wavelength converting detector with gallium nitride base is prepared by gallium nitride based material and series - couples multiple quantum well infrared detector as well as luminous diode on the same chip. It features that multiple quantum well infrared detector is used to convert infrared radiation signal to be infrared photoelectric signal and then luminous diode is used to infrared photoelectric signal to be light signal of visible waveband.

The invention describes a vertical tunnel FET device including a vertical P-I-N heterojunction structure of a P-doped nanowire gallium nitride source/drain, an intrinsic InN layer, and an N-doped nanowire gallium nitride source/drain. A high-K dielectric layer and a metal gate wrap around the intrinsic InN layer.

The invention belongs to the field of semiconductor material processing, and particularly discloses a surface passivation process of a semiconductor material. The semiconductor material is gallium nitride. The surface passivation process comprises the steps of sequentially processing a first PbI2 passivation layer, a second SiO2 passivation layer, a third methylbenzotriazole TTA passivation layer, a fourth SiO2 passivation layer and a fifth PI passivation layer on a gallium nitride substrate from bottom to top, wherein after processing of a semiconductor chip is completed on the semiconductor gallium nitride substrate, a PbI2-SiO2-TTA-SiO2-PI composite structure is formed in an area, which needs passivation protection, of the surface of the semiconductor chip. According to the surface passivation process, the gallium nitride semiconductor material is optimized, the steps are few, the time is short, the passivation effect is good, and the surface passivation process has very wide application prospects.

The invention discloses a GaN-based semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductor devices. The GaN-based semiconductor device comprises asubstrate, and a GaN-based epitaxial layer and a dielectric layer which are sequentially formed on the substrate, wherein a deposition hole is formed in the dielectric layer, a front metal layer is filled in the deposition hole, a back through hole is formed in the substrate, and the back through hole penetrates through the GaN-based epitaxial layer; a back metal layer is deposited at the side, away from the GaN-based epitaxial layer, of the substrate and in the back through hole, and back metal in the back through hole is in contact connection with the front metal layer and the dielectric layer separately. According to the GaN-based semiconductor device, the adhesion of back metal can be improved, so that the reliability of the device is improved.

The invention discloses a deep ultraviolet epitaxial wafer and a preparation method thereof. The deep ultraviolet epitaxial wafer comprises P-type gallium nitride, and the P-type gallium nitride comprises a P-type aluminum gallium nitride layer, an aluminum nitride layer, a P-doped gallium nitride layer and a heavily-doped P-type aluminum gallium nitride layer which grow in sequence, wherein the P-type aluminum gallium nitride layer can effectively reduce absorption of deep ultraviolet light, the aluminum nitride layer can effectively reduce quantum well energy band bending and improve quantum well hole injection on the basis of effectively reducing the absorption of the deep ultraviolet light, the P-doped gallium nitride layer can realize high doping and improve quantum well hole injection, and the heavily-doped P-type aluminum gallium nitride layer can effectively realize ohmic contact of a chip process, and can effectively reduce the absorption of the deep ultraviolet light at the same time. Therefore, by combining the four structural layers included in the P-type gallium nitride, the absorption of the deep ultraviolet light can be reduced, and the luminous efficiency of a deep ultraviolet LED is improved.

The invention discloses an InGaN/GaN heterogeneous epitaxial structure and a growing method thereof. The epitaxial structure comprises a substrate which is made of sapphire, silicon, silicon carbide,gallium nitride or gallium arsenide, a GaN layer which grows on the substrate, an InGaN active region which grows on the GaN layer and a GaN layer which grows on the InGaN active region. According tothe InGaN/GaN heterogeneous epitaxial structure and the growing method thereof, the energy conversion efficiency of an InGaN-based solar cell can be remarkably improved.