The invention discloses an N-type single-sided cell preparation method. The N-type single-sided cell preparation method comprises steps that 1) texturing of an N-type silicon wafer is carried out; 2) HCI solution, HF solution, and HPO3 solution are sequentially used for cleaning; 3) POCl 3 mixed liquor is prepared; 4) the back surface of the cleaned silicon wafer is provided with a silicon nitride mask in an adhesive manner, and then is disposed in the POCI 3 mixed liquor, and then is disposed in a diffusion furnace for heating; 5) cooling is carried out, the silicon wafer after phosphorus diffusion is taken out, and the mask is torn off; 6) by adopting wet etching technology, the front surface is provided with a silicon nitride anti-reflection film in a plated way; 7) silk-screen printing is carried out, and sintering of front surface grid lines and back surface aluminum back surface field. A P type technology is used for the preparation of the N type single-sided cell, and therefore costs are low, the technology is simple, production efficiency is low, and large-scale production is realized; and by adopting the solution method having a new formula for the phosphorus diffusion, the diffusion is uniform, the costs are low, the efficiency is high, energy saving and environment protection are realized, and photoelectric conversion efficiency is high.