The invention discloses a
carbon doping device and a
carbon doping method for growing semi-insulating
gallium arsenide single crystals, and relates to the technical field of
semiconductor materials. The device comprises a
quartz tube and a PBN
crucible set, the PBN
crucible set is arranged in the
quartz tube, and sealing chucks are installed at the two ends of the
quartz tube; pipelines are respectively arranged at two ends of the quartz tube, namely an inflation pipeline and an exhaust pipeline; a third on-off valve is arranged on the gas filling pipeline, two
branch gas pipelines which are connected in parallel are arranged on the upstream of the gas filling pipeline and are respectively called an
oxygen filling pipeline and a carbon filling pipeline, the
oxygen filling pipeline is connected with an
oxygen source, and the carbon filling pipeline is connected with a carbon gas source, wherein the on-off of the oxygen source or the carbon gas source is controlled through the valves; the downstream of the exhaust pipeline is provided with two
branch air pipelines which are connected in parallel and are respectively called a deflation pipeline and a vacuumizing pipeline, the deflation pipeline is provided with a valve, and the vacuumizing pipeline is connected with a vacuumizing device. According to the invention, an oxygenating baking process and a C
deposition process can be respectively implemented, and the two processes are sequentially carried out on the same equipment, so that the equipment is simplified, and the
heat energy loss is reduced.