Method of patterning a layer of a material

a technology of material layer and patterning, which is applied in the direction of coating, metallic material coating process, chemical vapor deposition coating, etc., can solve the problems of affecting the performance of an integrated circuit, adversely affecting the functionality of the semiconductor structure, and forming junction leakage in the transistor

Inactive Publication Date: 2006-08-03
ADVANCED MICRO DEVICES INC
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  • Abstract
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AI Technical Summary

Problems solved by technology

If, however, copper is incorporated into the crystal lattice of a silicon substrate, deep impurity levels that may degrade the performance of transistors formed in the substrate and cause junction leakage in the transistors can be formed.
Even trace amounts of copper in transistors are sufficient to adversely affect the performance of an integrated circuit.
Both missing metal plugs and metal plugs having a high electric resistivity may adversely affect the functionality of the semiconductor structure 100.
A problem of the method of providing electric contact to a circuit element in a semi-conductor structure according to the state of the art is that, due to the diffusion of nitrogen from the anti-reflective coating 112 into the layer 113 of photoresist, it may occur that irradiated portions of the layer 113 of photoresist are incompletely removed, which can entail a reduced width of contact vias and metal plugs formed in such contact vias, as well as missing contact vias and metal plugs.

Method used

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Embodiment Construction

[0030] Illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.

[0031] The present invention will now be described with reference to the attached figures. Various structures, systems and devices are schematically depicted in the drawings for purposes of explanation only and so as to not obscure the present invention with details that are we...

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Abstract

The present invention reduces problems resulting from an incomplete removal of photoresist in a photolithographic process which are caused by a diffusion of contaminants from an anti-reflective coating into a layer of photoresist. A protective layer is formed over the anti-reflective coating, and the layer of photoresist is formed over the protective layer. The protective layer substantially prevents a diffusion of contaminants into the photoresist.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to the formation of integrated circuits, and, more particularly, to the patterning of material layers by means of photolithography. [0003] 2. Description of the Related Art [0004] Integrated circuits comprise a large number of individual circuit elements such as, e.g., transistors, capacitors and resistors, formed on a substrate. These elements are connected internally by means of electrically conductive lines to form complex circuits such as memory devices, logic devices and microprocessors. In order to accommodate all the electrically conductive lines required to connect the circuit elements in modern integrated circuits, the electrically conductive lines are arranged in a plurality of levels stacked upon each other over the circuit elements. [0005] The performance of integrated circuits can be improved by increasing the number of functional elements per circuit in order to increase t...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/4763
CPCC23C16/308H01L21/0214H01L21/02164H01L21/02211H01L21/02274H01L21/0276H01L21/31144H01L21/3145H01L21/31608H01L21/76802
Inventor FROHBERG, KAIMAZUR, MARTINRUELKE, HARMUT
Owner ADVANCED MICRO DEVICES INC
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