5 results about "Continuous annealing" patented technology

The invention discloses a high-surface-quality hot-galvanized transformation induced plasticity (TRIP) steel plate and a manufacturing method thereof. The hot-galvanized TRIP steel plate is prepared from chemical components in percentage by weight as follows: 0.10%-0.15% of C, 1.20%-1.80% of Mn, less than or equal to 0.030% of P, less than or equal to 0.030% of S, 1.20%-2.40% of Als and the balance of Fe and inevitable impurities. The manufacturing method of the TRIP steel plate comprises the steps as follows: continuous casting steelmaking-hot rolling-cold rolling-continuous annealing and hot galvanizing. The structure form of the hot-galvanized TRIP steel plate prepared with the method includes ferrite, bainite, retained austenite and martensite, the grain size grade ranges from Grade 10.5 to Grade 11, the tensile strength ranges from 640 MPa to 670 MPa, the yield strength ranges from 395 MPa to 465 MPa, the ductility is higher than or equal to 30%, the strength and ductility product can be 23GPa% or above, and the plate has the high surface quality, mechanical performance and corrosion resistance.

The invention belongs to the technical field of heat treatment of steel and iron materials, and particularly relates to a continuous spheroidizing annealing method for high-carbon chromium bearing steel round steel. The method comprises the steps that high-carbon-chromium bearing steel round steel in a hot rolling state is loaded into a roller hearth type continuous annealing furnace to be heated, the heating time is 3-3.5 h, and the heating rate is 200-250 DEG C/h; after heating to 790-810 DEG C, keeping the temperature for 3.5-4 hours to finish primary isothermal treatment; cooling treatment is carried out, rapid cooling is carried out to 710-730 DEG C, heat preservation is carried out for 6.5-7 h, and then secondary isothermal treatment is carried out; after secondary isothermal treatment, furnace cooling is carried out to 600-650 DEG C, then furnace discharging and air cooling are carried out to room temperature, and continuous spheroidizing annealing treatment is completed; after annealing, the Brinell hardness of the high-carbon chromium bearing steel is 180-200 HBW, the total decarburized layer depth is smaller than or equal to 0.8% of the nominal diameter, the spheroidized structure is 2.0-3.0 grades, the uniformity is good, and necessary structure preparation is made for obtaining good comprehensive performance.

The invention provides a method for improving the reliability of a gate oxide layer in a SiC field effect transistor, and the method comprises the steps: carrying out the three times of annealing treatment on a SiO2 gate oxide layer through employing different gases in three processing environments, so as to reduce the C-related defects at the interface of the SiO2 gate oxide layer. That is to say, through three times of continuous annealing treatment, various traps and defects at the interface of the SiO2 gate oxide layer in the SiC field effect transistor can be removed, the interface quality is optimized, the compactness is enhanced, the leakage current is reduced, the reliability is improved, and the performance of the SiC field effect transistor is further improved.