7 results about "Photomask" patented technology

The present invention provides a series of methods, compositions, and articles for patterning a surface with multiple, aligned layers of molecules, by exposing the molecules to electromagnetic radiation. In certain embodiments, a single photomask acts as an area-selective filter for light at multiple wavelengths. A single set of exposures of multiple wavelengths through this photomask may make it possible to fabricate a pattern comprising discontinuous multiple regions, where the regions differ from each other in at least one chemical and/or physical property, without acts of alignment between the exposures. In certain embodiments, the surface includes molecules attached thereto that can be photocleaved upon exposure to a certain wavelength of radiation, thereby altering the chemical composition on at least a portion of the surface. In some embodiments, the molecules attached to the surface may include thiol moieties (e.g., as in alkanethiol), by which the molecule can become attached to the surface. In some embodiments, the molecules may be terminated at the unattached end with photocleavable groups. In other embodiments, a molecule that was photocleaved may be exposed to another molecule that binds to the photocleaved molecule. In certain cases, the molecules may be terminated at the unattached end with hydrophilic groups that may, for example, be resistant to the adsorption of proteins. In other cases, the molecules may be terminated at the unattached end with end groups that are not resistant to the adsorption of proteins. In certain embodiments, the techniques are used to pattern simultaneously two different regions that are resistant to the adsorption of proteins, and a third region that does not resist the adsorption of proteins.

The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgF_x and even more particularly may be comprised of MgF₂ deposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to Al₂O₃ and Al_xN_y.

A method for fabricating semiconductor device includes providing a substrate having a first device region and a second device region. Floating gate structure is formed in the first device region. Liner layer and nitride layer are sequentially deposited over the first device region and the second device region. The floating gate structure is conformally covered. Etching back process is performed on the nitride layer to reduce thickness of the nitride layer. The first device region is still covered by the nitride layer. A photomask layer is formed over the substrate with an opening region to expose the second device region for cleaning. The photomask layer is removed. A gate oxide layer grows on the substrate in the second device region. Anisotropic etching process is performed to remove the nitride layer, resulting in a nitride spacer on a lower portion of a sidewall of the floating gate structure.

The invention discloses a photomask cleaning device and a cleaning method thereof, and relates to the technical field of photomask cleaning. The photomask cleaning device comprises a machine body, a storage table, a liquid medicine soaking tank and a scrubbing tank, the storage table, the liquid medicine soaking tank and the scrubbing tank are arranged in the machine body, a first grabbing module is fixedly installed above the liquid medicine soaking tank, a second grabbing module is fixedly installed above the scrubbing tank, a first scrubbing assembly is installed at the position corresponding to the liquid medicine soaking tank, and a second scrubbing assembly is fixedly mounted at the corresponding position of the scrubbing tank. According to the photomask cleaning device and the cleaning method thereof, a multi-groove automatic cleaning mode is adopted, a photomask can be cleaned for multiple times, the cleaning effect is better, the steps of manual operation are reduced, and a large amount of manpower is saved.

The invention relates to a fluorescence analysis method based on HCR and cation exchange reaction of hydrogel, and the method comprises the following steps: modifying a C-C double bond on the surfaceof a substrate through a silanization reaction, and constructing a PEG hydrogel array on the substrate by means of a photomask through a free radical polymerization reaction initiated by ultraviolet light; opening a hairpin structure of a capture probe modified on the hydrogel by the target molecule, initiating a hybridization chain reaction between biotinylation hairpins H1 and H2, and forming along-chain double-chain DNA at a sensing site. Through biotin-streptavidin specific binding reaction, a biotinylated quantum dot CdS is fixed to a sensing site. CdS is initiated by Ag<+> to generate cation exchange reaction, and the fluorescence of Rhod-5N is greatly enhanced by Cd2<+>. Array point fluorescence is quantified by using a gene chip scanner, so that high-sensitivity and high-specificity analysis of target molecules is realized. The method is simple to operate, low in cost, high in sensitivity, good in specificity and high in universality.

Various embodiments provide photomask patterns and methods for forming the same. In an exemplary method, a to-be-etched pattern can be provided. The to-be-etched pattern can be divided into a first mask pattern and an initial second mask pattern. The first mask pattern can include one or more first patterns and the initial second mask pattern can include one or more second patterns. A second print scattering pattern can be formed and added to the initial second mask pattern. A position of the second print scattering pattern can be separated from a position of the one or more first patterns of the first mask pattern.