The invention provides a light-emitting
diode and a manufacturing method thereof, and the structure of the light-emitting
diode sequentially comprises a substrate, an n-type GaN layer, a light-emitting layer, a p-type GaN layer, an
ohmic contact layer, a
passivation layer, a p
electrode and an n
electrode from bottom to top, and is characterized in that a plurality of convex hemispherical, semi-elliptical or other irregularly-shaped convex structures are arranged on the upper surfaces of the substrate and the
ohmic contact layer. The rotary
coating method is utilized in the technical method for respectively forming
layers of masks on the substrate and the
ohmic contact layer, and then the plurality of convex hemispherical, semi-elliptical or other irregularly-shaped convex structures are formed on the substrate and the ohmic
contact layer respectively by
etching the masks, thereby forming the rough upper surfaces. The light extraction efficiency of the light-emitting
diode can be improved through the two
layers of the rough surfaces which achieve the micron level, or even the nanometer level, thereby reducing the production cost while greatly improving the light-emitting brightness.