The invention discloses a preparation method for a single-layer MoS2-WS2 transverse
heterojunction, which belongs to the field of nano
material growth. Electrochemical oxidation treatment is carried out on selected precursor sources to volatilize the precursor sources corresponding to
molybdenum and
tungsten at different temperatures, and the transverse
heterojunction with the micron-sized clear interface is prepared in one step by a
chemical vapor deposition method. According to the method of growing the transverse
heterojunction, in a tubular furnace capable of accurately controlling the temperature,
inert gas is used as transport gas of reaction sources (a
molybdenum source, a
tungsten source and a
sulfur source), and different
chemical vapor deposition reactions are controlled to occurto form the transverse heterojunction. The single-layer MoS2-WS2 transverse heterojunction prepared by the method has a micron-scale clear heterojunction boundary, and the transverse size can reach 100 microns or above. According to the method, the
controllability of the growth process is high, a growth temperature window can be effectively widened, the growth temperature is reduced, and size andinterface controllable growth is achieved.