Manufacturing method for gas barrier film, and electronic member or optical member provided with gas barrier film

一种制造方法、阻气性的技术,应用在化学仪器和方法、液态化学镀覆、叠加层的镀覆等方向,能够解决增加工序数、不能获得阻气性能、生产率降低成本等问题,达到耐久性优异的效果

Inactive Publication Date: 2014-10-22
LINTEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with this method, sufficient gas barrier performance cannot be obtained unless the thickness of the gas barrier layer is on the order of microns. In addition, when the gas barrier film is placed under high temperature and high humidity conditions, polysilicon nitrogen may The interface between the alkane film and the film is peeled off to reduce the gas barrier property
[0005] Conventionally, as a method of improving the adhesiveness of the interface between the film and the polysilazane film, a method of providing a primer layer on the film, or a method of generating functional groups on the film surface by corona treatment, plasma treatment, etc. are known. method, etc., but since the number of steps is increased in both, there is a problem in terms of cost due to a decrease in productivity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1)

[0132]On a cycloolefin copolymer film (manufactured by Polyplastics Co., Ltd., TOPAS 6017, thickness 100 μm, glass transition temperature 160° C., abbreviated as “COC” in Table 1.) as a substrate, coating containing A polymer compound solution (manufactured by Clariant Japan, AQUAMICA NL110-20) of perhydropolysilazane as a silicon-based polymer compound and xylene as a solvent so that the thickness after drying was 150 nm was applied to the obtained coating film. It was heated at 120° C. for 2 minutes to form a polymer compound layer.

[0133] It should be noted that when the cycloolefin copolymer film was immersed in xylene at 23° C. for 72 hours, the gel fraction of the cycloolefin copolymer film was 80%.

[0134] Next, argon (Ar) was plasma ion-implanted into the surface of the polymer compound layer under the following conditions by using a plasma ion implantation apparatus to fabricate a gas barrier film 1 in which a gas barrier layer was formed on a base material.

[01...

Embodiment 2~5)

[0146] In Example 1, except that the base material and the solvent shown in the following Table 1 were used as the base material and the solvent, it was carried out in the same manner as in Example 1, and Examples 2 to 2 in which a gas barrier layer was formed on the base material were produced. 5. Gas barrier films 2-5.

[0147] In addition, in Table 1, PC, PSF, and PVAC have the following meanings.

[0148] ・PC: Polycarbonate resin film (PUREACE, manufactured by Teijin Chemicals, thickness 100 μm, glass transition temperature 145°C)

[0149] ・PSF: polysulfone-based resin film (manufactured by BASF Corporation, ULTRASON S3010, thickness 55 μm, glass transition temperature 187°C)

[0150] • PVAC: polyvinyl acetal resin film (manufactured by Sekisui Chemical Industry Co., Ltd., SLEC KS-10, thickness 20 μm, glass transition temperature 110° C.).

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PUM

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Abstract

The present invention pertains to: a method for producing a gas barrier film that includes at least a base that is formed of a synthetic resin, and a gas barrier layer that is formed on the base, the method comprising a step 1 and 2 below; and an electronic member or an optical member that includes a gas barrier film obtained by the method. In the gas barrier film obtained by means of the present invention, a problem of adhesion failure between the gas barrier layer and the base dose not occur even when the gas barrier film is subjected to high-temperature / high-humidity conditions. [Step 1] that applies a silicon-based polymer compound solution that includes a silicon-based polymer compound and an organic solvent to the base to obtain a film of the silicon-based polymer compound solution, and dries the film by heating to form a layer that includes the silicon-based polymer compound, the base having a gel fraction of 70% or more and less than 98% when immersed in the organic solvent at 23°C for 72 hours; [Step 2] that subjects the layer that includes the silicon-based polymer compound to a plasma treatment to form the gas barrier layer.

Description

technical field [0001] The present invention relates to a method for producing a gas barrier film used as a member for electronic devices such as a liquid crystal display and an electroluminescence (EL) display, and an electronic member or an optical member including the gas barrier film. Background technique [0002] In recent years, in order to achieve thinner, lighter, and more flexible displays such as liquid crystal displays and electroluminescence (EL) displays, studies have been conducted on the use of transparent plastic films. However, plastic films generally transmit water vapor, oxygen, etc. compared to glass substrates, so if a transparent plastic film is used as a substrate of a display, there is a problem that elements inside the display are likely to deteriorate. [0003] In order to solve this problem, Patent Document 1 proposes a flexible display substrate in which a transparent gas barrier layer made of a metal oxide is laminated on the surface of a transpa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D7/24B05D3/04B32B9/00B32B27/00B32B27/16
CPCB32B9/00B32B27/00B32B27/16C23C14/48B05D3/148B05D7/04C23C18/122C23C28/00
Inventor 岩屋涉伊藤雅春近藤健
Owner LINTEC CORP
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