Functionalized carbosilane polymers and photoresist compositions containing the same

a carbosilane polymer and carbosilane technology, applied in the field of functionalized carbosilane polymers and photoresist compositions containing the same, can solve the problems of unsuitable photoresist applications and no report has attributed a higher refractive index

Inactive Publication Date: 2009-03-26
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, however, the 193-nm absorption of these polymers has also progressively increased with the increase in sulfur content and has made them unsuitable for photoresist applications.
Furthermore, no report has attributed higher refractive index to polycarbosilanes.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0066]Allylmalonie acid di-tetrahydropyranyl ester was prepared. Allylmalonic acid (7.21 grams, 0.05 mole), 3,4-dihydro-2H-pyran (16.82 g, 0.20 mole), and dichloromethane (50 ml) were placed in a round bottom flask equipped with a magnetic stirrer, nitrogen inlet, and a water condenser. Pyridine p-toluenesulfonate (300 mg) was added to this mixture and stirred at room temperature for 3 hours. According to the IR spectrum of the reaction product, the reaction was complete. The reaction mixture was washed with 2×100 ml saturated sodium bicarbonate solution followed by 100 ml brine and was dried over anhydrous magnesium sulfate. The volatiles were removed in a rotary evaporator and the residue was dried under vacuum at room temperature. The NMR spectrum of the residue indicated that it contained only the desired product.

example 2

[0067]In this example, poly(carbomethylsilane) partially substituted with propylmalonic acid di-tetrahydropyranyl ester of formula (V) was prepared from the allylmalonic acid di-tetrahydropyranyl ester produced in accordance with Example 1.

[0068]Polycarbomethyisilane (Aldrich, Mw˜800) (1.16 g), allylmalonic acid di-tetrahydropyranyl ester (4.68 g, 0.015 mole), and tetrahydrofuran (THF) (5 ml) were placed in a round bottom flask equipped with a magnetic stirrer, nitrogen Inlet, and a water condenser. Platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex in xylene (0.25 ml) was added to this mixture and heated at 80-90° C. for 2 hours. Afterwards, another portion of the catalyst, platinum(0)-1,3-divinyl-1,1,3,3-tetramethyidisiloxane complex in xylene (0.25 ml), was added and heated at 80-90° for 2 more hours. The solution was allowed to cool to room temperature and added drop wise into 200 ml HFE-7100 (Ultra Pure Solutions, Inc.). The precipitated polymer was filtered through ...

example 3

[0069]In this example, allylmalonic acid di-α-methyl-γ-butyrolactone ester was prepared. Allylmalonic acid (7.21 grams, 0.05 mole), α-angelicalactone (16.82 g, 0.20 mole), and dichloromethane (50 ml) were placed in a round bottom flask equipped with a magnetic stirrer, nitrogen inlet, and a water condenser. Pyridine / p-toluenesulfonate (300 mg) was added to this mixture and heated to reflux for 19 hours. According to the IR spectrum of the reaction product, the reaction was complete. The reaction mixture was washed with 2×100 ml saturated sodium bicarbonate solution followed by 100 ml brine and was dried over anhydrous magnesium sulfate. The volatiles were removed at 40° C. under high vacuum. The NMR spectrum of the residue indicated that it contained only the desired product.

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Abstract

Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation application of U.S. Ser. No. 11 / 859,804 filed Sep. 24, 2007, the contents of which are incorporated by reference herein in their entirety.TRADEMARKS[0002]IBM® is a registered trademark of International Business Machines Corporation, Armonk, N.Y., U.S.A. Other names used herein may be registered trademarks, trademarks or product names of International Business Machines Corporation or other companies.BACKGROUND OF THE INVENTION[0003]1. Field of the Invention[0004]This invention relates generally to functionalized carbosilane polymers and photoresist compositions containing the same.[0005]2. Description of Background[0006]Dry 193 nm resist materials are generally limited to indices of refraction near or below 1.7. It has been predicted that using a high refractive index resist in immersion lithography can significantly enhance the depth of focus, exposure latitude and mask error enhancement factor (MEEF) at...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/26G03F7/30
CPCG03F7/0757G03F7/0397Y10S430/106Y10S430/108Y10S430/143Y10S430/168
Inventor ALLEN, ROBERT D.COLBURN, MATTHEW E.SANDERS, DANIEL P.SOORIYAKUMARAN, RATNAMTRUONG, HOA D.
Owner GLOBALFOUNDRIES INC
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