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15 results about "Transmission performance" patented technology

Method and device for coding uplink control information

ActiveCN103220083AImprove transmission performanceImprove transmission efficiencyForward error control useWireless communicationComputer architectureColumn vector
The embodiments of the invention provide a method and device for coding uplink control information. The method and the device are used for optimizing the transmission performance of the uplink control information. The method comprises the steps of: shifting column vectors of a predefined coding matrix M so as to create a new encoding matrix M'; and coding the uplink control information by using the new encoding matrix M'. The coding matrix which is adopted to code the uplink control information is not the fixed predefined coding matrix but the new encoding matrix which is created through shifting the column vectors of the predefined coding matrix. Compared with the method in the prior art that the same coding matrix is adopted to code the uplink control information regardless of the number of bits of the control information, the method provided by the embodiments of the invention has the advantages that corresponding coding matrixes can be determined according to the uplink control information, so that the transmission performance of the uplink control information can be optimized, and then, the efficiency of downlink transmission is increased.
Owner:HUAWEI TECH CO LTD

Composite underwater sound transmission rubber material and preparation method thereof

ActiveCN103724705AExtended storage timeStorage securityRubber materialActive agent
The invention relates to a composite underwater sound transmission rubber material and a preparation method thereof. A component A is prepared through steps of plasticating natural rubber, then adding into an internal mixer for mixing, adding metallic oxide, inorganic filler, active agent and accelerator for mixing, and discharging sheets by an open mill and testing; a component B is prepared through steps of plasticating chloroprene rubber, then adding into the internal mixer for mixing, then sequentially adding stearic acid, antiager, carbon black, inorganic filler and softener for mixing, adding sulphur for mixing, discharging sheets and cooling down; the composite underwater sound transmission rubber material is prepared through steps of mixing the component A and component B according to proportion of 1:1, packaging into triangle, thinning, discharging sheets, sampling for sulfuration test, and sulfurizing at relatively low temperature. The acoustic impedence of the material and acoustic characteristic impedence of water are well matched, the sound attenuation coefficient of sound wave transmitting in sizing material is low, the material has good hydrolytic resistance and silicone oil resistance; the material can be stored for long time, is safe to operate, has high underwater sound transmission performance, and can be sulfurized at low temperature so that the contradiction between low temperature sulfurization and normal temperature storage is relieved.
Owner:TIANJIN RUBBER IND RES INST

Multi-quantum well photovoltaic battery based on nanometer graphite electron transmission layer, and preparation method thereof

InactiveCN105244390AEvenly distributedGood light and heat stabilityLight-sensitive devicesFinal product manufactureElectrical batterySilicon solar cell
The invention relates to a multi-quantum well photovoltaic battery based on a nanometer graphite electron transmission layer, and a preparation method thereof. The battery comprises a front electrode, an anti-reflection layer, N-type silicon, P-type silicon and a back electrode, wherein a composite layer composed of graphite and semiconductor quantum dots is arranged between the anti-reflection layer and the N-type silicon. Compared to the prior art, the method is characterized in such a way that a sol method is employed, first of all, a semiconductor quantum dot colloid is prepared; under the effect of a surfactant, the graphite is uniformly dispersed to the colloid, and then, by taking the graphite as a crystal growth liquid, a uniform an ordered electron transmission layer and a semiconductor quantum dot layer are grown on the surface of a crystal silicon chip in a deposition mode. According to the invention, by use of a quantum dot impact ionization effect and a namometer effect and excellent electron separate transmission performance of nanometer graphite, the minority carrier life and the quantum efficiency of the photovoltaic battery are improved, and the nanometer graphite can improve separation and collection of electrons by the silicon solar battery, improves photoelectric currents and accordingly improve the conversion efficiency of the silicon solar battery.
Owner:SHANGHAI NORMAL UNIVERSITY

PMD suppression device for high speed optical communication system and optical communication system

The invention discloses a PMD suppression device for a high speed optical communication system and an optical communication system. The PMD suppression device comprises a polarization controller, an output signal monitoring feedback device and a reverse transmission channel, wherein the polarization controller is arranged at the input end of an optical transmission link; the output signal monitoring feedback device is arranged at the output end of the optical transmission link; the reverse transmission channel returns an output monitoring signal to the polarization controller at the input end of the optical transmission link; the polarization controller adjusts the polarization state of input light according to channel PMD detected in real time by the output signal monitoring feedback device or variation of transmission performance occurring due to influence of the PMD. The device and the system change the coupling shape of the polarization mode in the link by a method of changing the polarization state of the input signal so as to influence chromatic dispersion of the link polarization mode, and lead the transmission link to constantly maintain lower comprehensive features of the PMD by monitoring a received signal, thereby suppressing the chromatic dispersion of the polarization mode of the transmission link, and improving the transmission performance of the system.
Owner:FENGHUO COMM SCI & TECH CO LTD

Ultrahigh-frequency surface-mounted ceramic vertical interconnection structure and packaging structure

The invention provides an ultrahigh-frequency surface-mounted ceramic vertical interconnection structure and a packaging structure, belonging to the technical field of chip packaging microwave signal interconnection. The ultrahigh-frequency surface-mounted ceramic vertical interconnection structure comprises a ceramic medium, a front pin bonding pad, a back pin bonding pad and a similar coaxial structure, wherein the front pin bonding pad is arranged on the front surface of the ceramic medium, and a GND region is arranged around the front pin bonding pad; the back pin bonding pad is arranged on the back surface of the ceramic medium, and another GND region is arranged around the back pin bonding pad; the similar coaxial structure comprises a radio frequency signal vertical transition hole and a grounding vertical transition hole which are arranged in parallel; and the radio frequency signal vertical transition hole is arranged to be perpendicular to the ceramic front pin bonding pad. The packaging structure comprises the ultrahigh-frequency surface-mounted ceramic vertical interconnection structure. The ultrahigh-frequency surface-mounted ceramic vertical interconnection structure of the invention has the advantages that the vertical transmission performance of radio frequency can be improved, and the transmission of DC-40GHz broadband high-frequency signals can be realized between ceramics; and the structure is a vertical interconnection structure, good vertical transmission of radio frequency signals can be realized within 40 GHz, and return loss S11 and S22 are superior to -10 dB.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

Intelligent test platform and method for magnetic coupler with adjustable air gap thickness

PendingCN113959715ATest work performanceSimple and smart testingMachine part testingVibration testingElectrical conductorElectric machine
The invention belongs to the technical field of magnetic transmission, and particularly relates to an intelligent test platform and method for a magnetic coupler with adjustable air gap thickness. An output shaft of the variable frequency motor is connected with a permanent magnet disc of the magnetic coupler through a coupler, a rotating speed and torque sensor and a bearing seat; wherein this part is fixedly installed on a movable platform and moves along with the movement of the movable platform, and the movable platform is pushed by the planetary roller lead screw to move in the axial direction. The other variable frequency motor is used as a system load end, is connected with a conductor disc of the magnetic coupler through a coupler, a rotating speed and torque sensor and a bearing seat, and is fixedly mounted on the fixed platform through respective supporting seats. The pushing mechanism controls the movement of the mobile platform to realize air gap adjustment of the magnetic coupler. The laser displacement sensor dynamically measures the air gap thickness. The console adjusts the rotating speed and torque of the variable frequency motor and receives data measured by the sensor through the signal acquisition device, and the transmission performance of the magnetic coupler under different working conditions can be obtained by analyzing and processing the data.
Owner:JIANGSU UNIV

Semiconductor device, semiconductor structure and manufacturing method of interconnection structure

InactiveCN112530856AAvoid gatheringPrevent proliferationSemiconductor/solid-state device detailsSolid-state devicesSemiconductor structureDevice material
The invention discloses a semiconductor device, a semiconductor structure and a manufacturing method of an interconnection structure, belonging to the technical field of semiconductors. The manufacturing method of the interconnection structure comprises the steps that a barrier layer and a seed layer are sequentially formed on a dielectric layer with a groove, and the barrier layer and the seed layer are attached to the dielectric layer in a conformal mode; nitrogen ions are injected into the seed layer according to a preset angle to form a nitrogen-containing seed layer, and the nitrogen-containing seed layer is located on the top surface of the groove and extends towards the bottom of the groove along the two side walls of the groove; the nitrogen-containing seed layer is removed, a metal layer covering the barrier layer is formed, and the groove is filled with the metal layer; and the metal layer and the barrier layer on the top surface of the groove are removed, and planarization processing is performed on the metal layer in the groove to enable the metal layer in the groove to be flush with the surface of the dielectric layer on the top surface of the groove. According to themanufacturing method disclosed by the invention, cavities can be avoided, yield is improved, and meanwhile, the transmission performance of the interconnection structure and the semiconductor device can be improved.
Owner:CHANGXIN MEMORY TECH INC
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