12 results about "Silicon based" patented technology

A silicon-based optical modulator exhibiting improved modulation efficiency and control of “chirp” (i.e., time-varying optical phase) is provided by separately biasing a selected, first region of the modulating device (e.g., the polysilicon region, defined as the common node). In particular, the common node is biased to shift the voltage swing of the silicon-based optical modulator into its accumulation region, which exhibits a larger change in phase as a function of applied voltage (larger OMA) and improved extinction ratio. The response in the accumulation region is also relatively linear, allowing for the chirp to be more easily controlled. The electrical modulation input signal (and its inverse) are applied as separate inputs to the second region (e.g., the SOI region) of each arm of the modulator.

The invention relates to the technical field of semiconductors, and provides a compound semiconductor silicon-based mixer device and a preparation method thereof. The preparation method comprises thesteps of sequentially forming a sacrificial layer and a semiconductor function layer on a first substrate to form a first component, dividing a second substrate into an optical waveguide region and abonding region, forming an optical waveguide structure on the optical waveguide region, forming an alignment assembly in the bonding region, forming a bonding boss on the surface of the bonding region; arranging a first component on the bonding region, wherein the semiconductor function layer is bonded with the bonding boss, and the side wall, close to the optical waveguide region, of the semiconductor function layer is coupled with the end surface of the optical waveguide structure. According to the method, the problem of accurate alignment (namely passive alignment in the vertical directionand the horizontal direction) of the semiconductor function layer and the optical waveguide structure can be avoided. In addition, the integration degree of the semiconductor device and the coupling degree of the compound semiconductor photoelectric device and a silicon-based optical waveguide are improved, and the production efficiency is improved.

The invention relates to the field of topological photonic crystals and integrated photonic chips, and discloses an optical communication waveband wavelength division multiplexing silicon-based energy valley photonic crystal structure which comprises a silicon substrate which is divided into four areas through three boundaries, wherein first circular air holes and second circular air holes in the four areas are arranged in a triangular lattice staggered mode and form four topological waveguide structures at the boundary, and a second topological waveguide and a fourth topological waveguide located on the two sides respectively adopt air holes with different radiuses. Light waves of the two wave bands enter from the first topological waveguide, one wave band exits from the second topological waveguide, the other wave band exits from the fourth topological waveguide, and the structure can be used for achieving communication optical band wavelength division multiplexing on a micro-nano structure.

The invention discloses a silicon-based temperature-stable type microwave dielectric ceramic material and a preparation method thereof. The components of the microwave dielectric ceramic material areLi2CO3, Yb2O3 and SiO2, and the components of the microwave dielectric ceramic material are proportioned according to the stoichiometric ratio of LiYbSiO4. A traditional solid-phase reaction sinteringmethod is adopted, the preparation method is simple, and the sintering temperature is low. According to the prepared silicon-based temperature-stable microwave dielectric ceramic material, a near-zero resonant frequency temperature coefficient is obtained under the condition that a modifying material does not need to be added. The LiYbSiO4 ceramic prepared by the method disclosed by the inventionhas good microwave dielectric properties: the [epsilon]r ranges from 7.36 to 7.42, the quality factor Qf ranges from 19081 GHz to 25276 GHz, and the temperature coefficient of resonance frequency ranges from + 4.52 ppm/DEG C to + 8.03 ppm/DEG C.

The application discloses a narrow linewidth semiconductor laser that solves the problem in the prior art that using a long long-cavity structure to achieve a narrow linewidth in a waveguide results in increased propagation loss of light in the waveguide. The narrow linewidth semiconductor laser comprises a semiconductor light source and a passive filter. The passive filter comprises a waveguide grating coupler and a Bragg grating reflector. The semiconductor light source is configured to be connected to the passive filter. The waveguide grating coupler is configured to radiate the received light emitted by the semiconductor light source to the Bragg grating reflector and return the reflected light of the Bragg grating reflector back to the semiconductor light source. The narrow linewidthsemiconductor laser, by means of filter feedback and the three-dimensional space structural design, can not only avoid the long-cavity design to achieve low loss, but also is easy to integrate by means of the silicon-based and excellent spatial structure, thereby enabling large-scale photon integration.

The invention provides a method for preparing a lithium battery negative electrode by compounding silicon, carbon and silicon dioxide in an extruder, which comprises the following steps: carrying outmixed heat treatment on nano silicon powder and nano silicon dioxide to obtain silicon monoxide steam, introducing the silicon monoxide steam into a twin-screw extruder by using a flow guide pipe, then respectively adding graphite powder, CMC, SBR, CTAB, PTFE and paraffin powder into the twin-screw extruder for mixing and extrusion, and then screening the extruded powder through a screen at a discharge port to obtain the product. According to the method provided by the invention, the silicon monoxide steam, the graphite powder and other auxiliaries are mixed and extruded in the screw extruderto obtain the effectively coated silicon monoxide/carbon negative electrode material, so that the volume effect of the silicon-based negative electrode material in use can be effectively avoided, andmeanwhile, the whole preparation process is simple and controllable; and the problems of high equipment requirement and complex preparation process in the original process are solved, and the method has a wide application prospect.

The invention provides a silicon-based optoelectronic monolithic heterogeneous integration method, and relates to the technical field of silicon-based photonic integration. A III-V compound semiconductor and a silicon-based optoelectronic device are subjected to monolithic integration based on a silicon-based optoelectronic platform, and the method can be applied to the field of photoelectric microsystem application. The invention provides the monolithic heterogeneous integration method based on the silicon substrate, aiming at the urgent demand of the development trend of miniaturization, integration and multi-functionalization of a photoelectric microsystem for monolithic integration of active and passive semiconductor photonic devices of different material systems. By using the method, heterogeneous integration of active photoelectric devices such as a laser, a modulator and a detector and passive photoelectric devices such as a beam splitter, a coupler and an optical microcavity on the same silicon wafer platform can be realized.

The invention provides a miniature self-powered device based on bridge type MPEG, which is characterized in that the device comprises a piezoelectric structure having a silicon base and a frame coupled to the lower part of the piezoelectric structure through a coupling bridge for accommodating an inspection mass; the piezoelectric structure is coupled to the lower part of the piezoelectric structure through a coupling bridge. The piezoelectric structure includes a silicon substrate, an upper electrode and a lower electrode disposed on the silicon substrate, and a piezoelectric film for generating electric energy sandwiched between the upper electrode and the lower electrode. The frame has an open cavity with a predetermined size, and the test mass is located in the open cavity and coupledto the silicon substrate surface through a coupling bridge. The miniature self-energizing device further includes an upper electrode pad and a lower electrode pad connected to the upper electrode andthe lower electrode, respectively, and the upper electrode pad and the lower electrode pad are connected to a lead-out portion of the frame through a thin wire to transfer electric energy to an external device external to the self-energizing device. The miniature self-energizing device further includes an upper electrode pad and a lower electrode pad connected to the upper electrode and the lowerelectrode respectively. As that piezoelectric film generate electric energy in response to mechanical strain and the response of the mass control to vibration frequency are chec, the external vibration is effectively utilized to generate electric energy, and the piezoelectric film has the advantages of simple structure, strong practicability and the like.

The invention belongs to the technical field of lithium battery material preparation, and particularly relates to a silicon-based negative electrode material and a preparation method and application thereof. The silicon-based negative electrode material comprises the following raw materials: a non-metal silicon-containing material, a lithium source and an ionic liquid, the melting point of the ionic liquid is lower than that of the metal lithium. Lithium in the silicon-based negative electrode material exists in at least one structural form of a Li2SiO3 phase, a Li2Si2O5 phase and a Li4SiO4 phase, and the silicon-based negative electrode material is a pre-lithiated negative electrode material, has relatively high initial coulombic efficiency and reversible capacity, and is long in cycle life and stable in processing performance. The ionic liquid has the effects of a dispersing agent and a grinding aid, so that the problems that metal lithium with relatively high viscosity and ductility is agglomerated in the ball milling process to form powder blocks and is adhered to the wall of a ball milling tank and the like are effectively avoided, the pre-lithiation of the silicon-based negative electrode material is more uniform, and the first coulombic efficiency and long cycle stability of the silicon-based negative electrode material are ensured.