12 results about "Plasma treatment" patented technology

The plasma processing apparatus includes main electrodes 5, 31 opposed to each other with a plasma processing space 15 interposed therebetween. The plasma processing apparatus further has a side electrode 6 opposed to side faces 5B-1, 5B-2 of the main electrode 5, as well as a side electrode 32 opposed to side faces 31B-1, 31B-2 of the main electrode 31. Therefore, in addition to the plasma processing space 15 between the main electrode 5 and the main electrode 31, an electric field can be formed in spaces between the side faces of the main electrodes 5, 31 and the side electrodes 6, 32, the spaces serving as predischarge areas 16-1, 16-2. By this electric field, processing gas present in the predischarge areas 16-1, 16-2 can be transformed into plasma. Electrons and excitation species of the plasma generated in these predischarge areas 16-1, 16-2 can be supplied directly to the plasma processing space 15.

A plasma treatment method for etching a portion of an isolating layer present on a surface of an opening in a semiconductor structure is provided. The method comprising: providing a semiconductor structure comprising an opening in an external surface, wherein the external surface of the semiconductor structure and surfaces defining the opening are at least partially covered by the isolating layer, introducing a treatment gas to the semiconductor structure and the isolating layer, the treatment gas comprising a first component providing forming of a protective polymer during plasma treatment and second component providing etching of the isolating layer during plasma treatment, and treating the semiconductor structure and the isolating layer by inducing a plasma in the treatment gas, such that a protective polymer layer is formed on at least portions of the isolating layer present on the external surface of the semiconductor structure and on at least portions of the isolating layer present on upper portions of sidewalls of the opening, thereby protecting the portions of the isolating layer where the protective polymer layer is being formed, from the plasma, wherein portions of the isolating layer being exposed to the plasma are etched.

The invention discloses a carbon nanomaterial modified ultra-high molecular weight polyethylene fiber and a preparation method thereof. The preparation method comprises the following steps of: firstly, performing plasma treatment on an ultra-high molecular weight polyethylene fiber to generate active functional groups on the surface of the ultra-high molecular weight polyethylene fiber; then, immersing the ultra-high molecular weight polyethylene fiber into a carbon nanomaterial dispersion liquid with a proper content, and uniformly covering the surface of the ultra-high molecular weight polyethylene fiber with a carbon nanomaterial by means of an ultrasonic technology; and drying to remove a solvent, and then performing plasma treatment on the ultra-high molecular weight polyethylene fiber to graft and fix the carbon nanomaterial covering the surface of the ultra-high molecular weight polyethylene fiber, thereby finishing modification of the ultra-high molecular weight polyethylene fiber. According to the carbon nanomaterial modified ultra-high molecular weight polyethylene fiber prepared by the method disclosed by the invention, carbon nanotubes, graphene or a mixture of the carbon nanotubes and the graphene is used as a modifying material, so that the surface defects of the ultra-high molecular weight polyethylene fiber are improved, and the strength of the ultra-high molecular weight polyethylene fiber and the interface bonding between the ultra-high molecular weight polyethylene fiber and resin are improved.

To produce a wiring substrate having excellent electrical characteristics with conduction failure in a hole formed in a layer made of a fluororesin material sufficiently suppressed without conducting an etching treatment using metal sodium. A process for producing a wiring substrate 1, which comprises forming a hole 20 in a laminate comprising a first conductor layer 12, a layer (A) 10 which is made of a fluororesin material containing a melt-moldable fluororesin (a) having specific functional groups and a reinforcing fiber substrate and which has a dielectric constant of from 2.0 to 3.5, a second conductor layer 14, an adhesive layer 16 and a layer (B) 18 made of a cured product of a thermosetting resin laminated in this order, applying, to an inner wall surface 20a of the hole 20, either one or both of a treatment with a permanganic acid solution and a plasma treatment without conducting an etching treatment using metal sodium, and then forming a plating layer 22 on the inner wall surface 20a of the hole 20.

The invention relates to the technical field of touch screen production, in particular to a glass cover plate preparation process. The preparation process comprises the following steps: the first stepof rough shape cutting; the second step of CNC forming; the third step of first ultrasonic cleaning; the fourth step of first visual inspection; the fifth step of strengthening treatment; the sixth step of flat grinding treatment; the seventh step of second ultrasonic cleaning; the eighth step of plasma treatment of a glass cover plate; the ninth step of placing the glass cover plate in a printing fixed seat; the tenth step of automatically checking the glass cover plate for visual defects; the eleventh step of placing IR ink and alignment line ink in a printing frame; the twelfth step of starting a double scraper printing machine; the thirteenth step of drying and curing; the fourteenth step of third ultrasonic cleaning. The glass cover plate preparation process has the advantages of being high in production efficiency, capable of saving resource and energy and low in product defect rate.

The invention discloses supporting claws, an airlock chamber and a plasma processing device host platform. The two paired supporting claws are in contact with the edge part of a wafer so as to supportthe wafer; each supporting claw comprises a soft wear-resistant material, and the soft wear-resistant material is arranged on the supporting claw and used for reducing or avoiding particles generatedwhen the wafer makes contact with the supporting claw. According to the invention, the soft wear-resistant material is arranged on the supporting claws, so that the soft contact between the supporting claws and the wafer is realized, the friction generated by the hard contact between the silicon wafer and the supporting claws is effectively avoided, the generation of particles can be prevented, and the defect rate of the wafer is greatly reduced.

Provided is a support unit included in an apparatus for treating a substrate using plasma and configured to support the substrate. The support unit may include a power supply rod connected to a high-frequency power supply; an electrode plate configured to receive power from the power supply rod; and a ground ring provided to surround the electrode plate when viewed from the top and including a ground ring to be grounded.